Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
| Parameter Name | Attribute value |
| Maker | Harris |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown |
| Other features | LOW CONDUCTION LOSS, HYPER FAST RECOVERY |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 6.2 A |
| Collector-emitter maximum voltage | 1200 V |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | MOTOR CONTROL |
| Transistor component materials | SILICON |
| Nominal off time (toff) | 75 ns |
| Nominal on time (ton) | 13 ns |
| HGT1S1N120CNDS9A | HGTP1N120CND | HGT1S1N120CNDS | |
|---|---|---|---|
| Description | Insulated Gate Bipolar Transistor, 6.2A I(C), 1200V V(BR)CES, N-Channel, TO-263AB | Insulated Gate Bipolar Transistor, 1A I(C), 1200V V(BR)CES, N-Channel, TO-220AB | Insulated Gate Bipolar Transistor, 1A I(C), 1200V V(BR)CES, N-Channel, TO-263AB |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown | unknown | unknown |
| Other features | LOW CONDUCTION LOSS, HYPER FAST RECOVERY | LOW CONDUCTION LOSS | LOW CONDUCTION LOSS |
| Maximum collector current (IC) | 6.2 A | 1 A | 1 A |
| Collector-emitter maximum voltage | 1200 V | 1200 V | 1200 V |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 code | TO-263AB | TO-220AB | TO-263AB |
| JESD-30 code | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 3 | 2 |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | NO | YES |
| Terminal form | GULL WING | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| transistor applications | MOTOR CONTROL | POWER CONTROL | POWER CONTROL |
| Transistor component materials | SILICON | SILICON | SILICON |
| Maker | Harris | - | Harris |
| ECCN code | - | EAR99 | EAR99 |
京公网安备 11010802033920号
EEWORLD
