3SK300
Silicon N Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
ADE-208-449
1st. Edition
Features
•
Low noise figure
NF = 1.0 dB typ. at f = 200 MHz
•
High gain
PG = 27.6 dB typ. at f = 200 MHz
Outline
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK300
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate 1 to source voltage
Gate 2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
14
±8
±8
25
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
2
3SK300
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate 1 to source breakdown
voltage
Gate 2 to source breakdown
voltage
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
Symbol
V
(BR)DSX
V
(BR)G1SS
V
(BR)G2SS
I
G1SS
I
G2SS
I
DS(op)
Min
14
±8
±8
—
—
4
0
0
20
2.4
0.8
—
24
—
12
—
—
Typ
—
—
—
—
—
8
+0.2
+0.3
25
3.1
1.1
0.021
27.6
1.0
15.6
3.0
2.7
Max
—
—
—
±100
±100
14
+1.0
+1.0
—
3.5
1.4
0.04
—
1.5
—
4.0
3.5
Unit
V
V
V
nA
nA
mA
V
V
ms
pF
pF
pF
dB
dB
dB
dB
dB
Test conditions
I
D
= 200
µA,
V
G1S
= –3 V,
V
G2S
= –3 V
I
G1
=
±10 µA,
V
DS
= V
G2S
= 0
I
G2
=
±10 µA,
V
DS
= V
G1S
= 0
V
G1S
=
±6
V,
V
DS
= V
G2S
= 0
V
G2S
=
±6
V,
V
DS
= V
G1S
= 0
V
DS
= 6 V, V
G1S
= 0.75 V,
V
G2S
= 3 V
V
DS
= 10 V, V
G2S
= 3 V,
I
D
= 100
µA
V
DS
= 10 V, V
G1S
= 3 V,
I
D
= 100
µA
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 1 kHz
V
DS
= 6 V,
V
G2S
= 3 V, I
D
= 10 mA
f = 1 MHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 200 MHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 900 MHz
V
DS
= 6 V, V
G2S
= 3 V,
I
D
= 10 mA, f = 60 MHz
Gate 1 to source cutoff voltage V
G1S(off)
Gate 2 to source cutoff voltage V
G2S(off)
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Power gain
Noise figure
Noise figure
Note: Marking is “ZR–”
|y
fs
|
Ciss
Coss
Crss
PG
NF
PG
NF
NF
3
3SK300
Main Characteristics
Maximum Channel Power
Dissipation Curve
Channel power dissipation Pch (mW)
200
20
Typical Output Characteristics
1.2 V
V
G2S
= 3 V
Pulse test
1.0 V
16
150
Drain current I
D
(mA)
12
0.8 V
8
0.6 V
V
G1S
= 0.4 V
100
50
4
0
50
100
150
200
0
Ambient Temperature Ta (
°C
)
2
4
6
8
Drain to source voltage V
DS
(V)
10
Drain current I
D
(mA)
Drain current I
D
(mA)
Drain Current vs. Gate1 to Source Voltage
20
3.0 V
V
DS
= 6 V
2.5 V
Pulse test
2.0 V
16
1.5 V
12
1.0 V
Drain Current vs. Gate2 to Source Voltage
20
3.0 V
2.0 V V
DS
= 6 V
Pulse test
2.5 V
16
1.5 V
12
1.0 V
8
8
4
V
G2S
= 0.5 V
0
1
2
3
4
5
Gate1 to source voltage V
G1S
(V)
4
V
G1S
= 0.5 V
0
1
2
3
4
5
Gate2 to source voltage V
G2S
(V)
4
3SK300
Forward Transfer Admittance vs.
Gate1 to Source Voltage
Forward transfer admittance |y
fs|
(ms)
30
V
DS
= 6 V
f = 1kHz
24
2.5 V
2V
12
1.5 V
1V
V
G2S
= 0.5 V
0
0.4
0.8
1.2
1.6
2
Gate1 to source voltage V
G1S
(V)
0
4
8
12
16
Drain current I
D
(mA)
20
Power gain PG (dB)
3V
50
40
Power Gain vs. Drain Current
V
DS
= 6 V
V
G2S
= 3V
f = 200MHz
18
30
20
6
10
Noise Figure vs. Drain Current
5
V
DS
= 6 V
V
G2S
= 3V
f = 200MHz
50
Power Gain vs. Drain to Source Voltage
V
G2S
= 3V
I
D
= 10mA
f = 200MHz
4
Noise figure NF (dB)
40
Power gain PG (dB)
3
30
20
2
1
10
0
4
8
12
16
Drain current I
D
(mA)
20
0
2
4
6
8
10
Drain to source voltage V
DS
(V)
5
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