Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-18
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.2 A |
| Collector-based maximum capacity | 7 pF |
| Collector-emitter maximum voltage | 32 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 60 |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.39 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 180 MHz |
| Maximum off time (toff) | 800 ns |
| VCEsat-Max | 0.8 V |
| Base Number Matches | 1 |
| BCY78-9 | BCY79-8 | BCY79-7 | BCY79-9 | BCY78-8 | BFX37 | BCY79 | |
|---|---|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.1 A | 0.2 A |
| Collector-based maximum capacity | 7 pF | 7 pF | 7 pF | 1 pF | 7 pF | 6 pF | 7 pF |
| Collector-emitter maximum voltage | 32 V | 45 V | 45 V | 45 V | 32 V | 80 V | 45 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 60 | 45 | 40 | 60 | 45 | 125 | 120 |
| JEDEC-95 code | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| Package body material | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
| Maximum power dissipation(Abs) | 0.39 W | 0.39 W | 0.39 W | 0.39 W | 0.39 W | 0.36 W | 0.6 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 180 MHz | 180 MHz | 180 MHz | 180 MHz | 180 MHz | 70 MHz | 180 MHz |
| VCEsat-Max | 0.8 V | 0.8 V | 0.8 V | 0.8 V | 0.8 V | 0.4 V | 0.8 V |
| Maximum off time (toff) | 800 ns | 800 ns | 800 ns | 800 ns | 800 ns | - | 800 ns |
| Maker | - | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] | CDIL[Continental Device India Pvt. Ltd.] |