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BD313

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size151KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

BD313 Overview

Transistor

BD313 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)10 A
ConfigurationSingle
Minimum DC current gain (hFE)25
Maximum operating temperature175 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)150 W
surface mountNO
Nominal transition frequency (fT)4 MHz
Base Number Matches1
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