JANS1N6152A datasheet, PDF - EEWORLD Datasheet

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JANS1N6152A: DescriptionTrans Voltage Suppressor Diode, 1500W, 20.6V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2; CategoryDiscrete semiconductor diode; File Size118KB，2 Pages; ManufacturerSEMTECH; Websitehttp://www.semtech.com

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Trans Voltage Suppressor Diode, 1500W, 20.6V V(RWM), Bidirectional, 2 Element, Silicon, HERMETIC SEALED, GLASS PACKAGE-2

JANS1N6152A Parametric

Parameter Name	Attribute value
package instruction	O-LALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Minimum breakdown voltage	25.7 V
Breakdown voltage nominal value	27 V
Shell connection	ISOLATED
Maximum clamping voltage	37.4 V
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	2
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum power dissipation	5 W
Certification status	Qualified
Guideline	MIL-19500/516
Maximum repetitive peak reverse voltage	20.6 V
surface mount	NO
technology	AVALANCHE
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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QPL

1500 Watt Axial Leaded TVS

1N6138A

1N6173A

Thru

TEL:805-498-2111 FAX:805-498-3804

DESCRIPTION

The 1N61xx series of transient voltage suppressors are

designed to protect military and commercial electronic

equipment from overvoltages caused by lightning, ESD,

EFT, inductive load switching, and EMP. These devices are

constructed using two p-n junction TVS diodes in a back-to-

back configuration, hermetically sealed in a voidless glass

package. The hermetically sealed package provides high

reliability in harsh environmental conditions. TVS diodes

are further characterized by their high surge capability, low

operating and clamping voltages, and a theoretically

instantaneous response time. This makes them ideal for

use as board level protection for sensitive semiconductor

components.

FEATURES:

•

1500 Watts Peak Pulse Power (tp = 10/1000µs)

Voidless hermetically sealed glass package

Metallurgically bonded

High surge capacity

Military & Industrial applications

Available in

JAN, JTX, JTXV

and

JANS

versions

per MIL-S-19500/516

MECHANICAL CHARACTERISTICS:

•

Hermetically sealed glass package

Tinned copper leads

Marking : P/N, date code, logo

MAXIMUM RATINGS

RATING

Peak Pulse Power (tp = 10 x 1000µs)

Operating Temperature

Storage Temperature

Steady-State Power Dissipation @ TL = 75ºC (3/8”)

SYMBOL

Ppk

Tstg

VALUE

1500

-65 to +175

UNIT

Watts

°C

Watts

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)

DEVICE

TYPE

REVERSE

STAND-OFF

VOLTAGE

RWM

1N6138A

1N6139A

1N6140A

1N6141A

1N6142A

1N6143A

1N6144A

1N6145A

1N6146A

1N6147A

1N6148A

1N6149A

1N6150A

1N6151A

1N6152A

1N6153A

1N6154A

1N6155A

1N6156A

1N6157A

1N6158A

1N6159A

1N6160A

1N6161A

1N6162A

1N6163A

1N6164A

1N6165A

1N6166A

1N6167A

1N6168A

1N6169A

1N6170A

1N6171A

1N6172A

1N6173A

(V)

5.2

5.7

6.2

6.9

7.6

8.4

9.1

9.9

11.4

12.2

13.7

15.2

16.7

18.2

20.6

22.8

25.1

27.4

29.7

32.7

35.8

38.8

42.6

47.1

51.7

56.0

62.2

69.2

76.0

83.6

91.2

98.8

114.0

121.6

136.8

152.0

REVERSE

LEAKAGE

CURRENT

(µA)

500

300

100

MINIMUM

BREAKDOWN

VOLTAGE

@ I

(V)

6.46

7.13

7.79

8.65

9.50

10.45

11.40

12.35

14.25

15.20

17.10

19.0

20.9

22.8

25.7

28.5

31.4

34.2

37.1

40.9

44.7

48.5

53.2

58.9

64.6

71.3

77.9

86.5

95.0

104.5

114.0

123.5

142.5

152.0

171.0

190.0

TEST

CURRENT

(mA)

175

150

125

100

MAXIMUM

CLAMPING

VOLTAGE

VC @ I

(V)

10.5

11.2

12.1

13.4

14.5

15.6

16.9

18.2

21.0

22.3

25.1

27.7

30.5

33.3

37.4

41.6

45.7

49.9

53.6

59.1

64.6

70.1

77.0

85.3

97.1

103.1

112.8

125.1

137.6

151.3

165.1

178.8

206.3

218.4

245.7

273.0

PEAK PULSE

CURRENT

Ipp

tp = 1mS

(A)

142.8

133.9

124.0

111.9

103.4

96.2

88.8

82.4

71.4

67.3

59.8

54.2

49.2

45.0

40.1

36.0

32.8

30.1

28.0

25.4

23.2

21.4

19.5

17.6

15.4

14.5

13.3

12.0

10.9

9.9

9.1

8.4

7.3

6.9

6.1

5.5

TEMPERATURE

COEFFICIENT

OF V

αVz

% / °C

0.05

0.06

0.07

0.08

0.085

0.09

0.095

0.100

0.105

0.110

MAXIMUM

REVERSE

LEAKAGE

CURRENT (Ir2)

TA=+150°C

(A)

12000

3000

2000

1200

800

600

400

1. Non-A Part has 5% higher clamping voltage, 5% lower minimum breakdown voltage, and 5% lower peak pulse current.

652 MITCHELL ROAD NEWBURY PARK CA 91320

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