30D4 datasheet, PDF - EEWORLD Datasheet

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30D4: Description1.7 A, 200 V, SILICON, RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size19KB，2 Pages; ManufacturerNihon Inter Electronics Corporation; Websitehttp://www.niec.co.jp

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30D4 Overview

1.7 A, 200 V, SILICON, RECTIFIER DIODE

30D4 Parametric

Parameter Name	Attribute value
Maker	Nihon Inter Electronics Corporation
Reach Compliance Code	unknown
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.93 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1.7 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	50 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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½

DIODE

FEATURES

Type :

30D2

OUTLINE DRAWING

* Low Forward Voltage drop

* Low Reverse Leakage Current

* High Surge Capability

Maximum Ratings

Rating

Repetitive Peak Reverse Voltage

Non-repetitive Peak Reverse Voltage

Average Rectified Output Current

RMS Forward Current

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

Symbol

V

RRM

V

RSM

I

O

I

F(RMS)

I

FSM

T

jw

T

stg

150

1.7

3.0

Approx Net Weight:1.24g

30D2

200

400

Ta=40°C *1

50Hz Half Sine

Wave Resistive Load

Ta=61°C *2

4.71

50Hz Half Sine Wave,1cycle,

Non-repetitive

- 40 to + 150

Unit

V

A

°C

Electrical

•

Thermal Characteristics

Characteristics

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance

Symbol

I

RM

V

FM

Conditions

Tj= 25°C, V

RM

= V

RRM

Tj= 25°C, I

FM

= 3.0A

*1

*2

Min. Typ. Max.

-

50

0.93

80

34

Unit

µA

V

°C/W

Rth(j-a) Junction to Ambient

*1 : Without Fin or P.C. Board

*2 : With Cu Fin (20 x 20 x 1 t, L = 5mm, Both Sides)

30D4 Related Products

	30D4
Description	1.7 A, 200 V, SILICON, RECTIFIER DIODE
Maker	Nihon Inter Electronics Corporation
Reach Compliance Code	unknown
ECCN code	EAR99
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.93 V
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Maximum output current	1.7 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse current	50 µA
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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