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IRF7910TRPBF-1

Description
Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size209KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

IRF7910TRPBF-1 Overview

Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET

IRF7910TRPBF-1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codecompliant
Maximum drain current (Abs) (ID)10 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
Humidity sensitivity level1
Number of components2
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
surface mountYES
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
IRF7910PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
12
15
17
10
V
nC
A
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
Q
g (typical)
I
D
(@T
A
= 25°C)
Top View
SO-8
Applications
l
High Frequency 3.3V and 5V input Point of-Load Synchronous Buck Converters for Netcom and
Computing Applications
l
Power Management for Netcom, Computing and Portable Applications
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRF7910PbF-1
Package Type
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7910PbF-1
IRF7910TRPbF-1
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current

Maximum Power Dissipation
„
Maximum Power Dissipation
„
Linear Derating Factor
Junction and Storage Temperature Range
Max.
12
± 12
10
7.9
79
2.0
1.3
16
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
„
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
Notes

through
„
are on page 8
1
www.irf.com
©
2013 International Rectifier
Submit Datasheet Feedback
November 22, 2013

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IRF7910TRPBF-1
Description Small Signal Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
Is it Rohs certified? conform to
Reach Compliance Code compliant
Maximum drain current (Abs) (ID) 10 A
FET technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code MS-012AA
Humidity sensitivity level 1
Number of components 2
Maximum operating temperature 150 °C
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 2 W
surface mount YES
Maximum time at peak reflow temperature NOT SPECIFIED
Transistor component materials SILICON
Base Number Matches 1
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