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FEATURES
Low cost
GALAXY ELECTRICAL
1N4942 - - - 1N4948
VOLTAGE RANGE:
200
---
1000
V
CURRENT: 1.0 A
FAST RECOVERY RECTIFIER
DO - 41
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
4942
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
1N
4944
400
280
400
1N
4946
600
420
600
1.0
1N
4947
800
560
800
1N
4948
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100
250
12
55
- 55---- +150
- 55---- + 150
500
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261081
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
50
N.1.
10
N.1.
1N4942---1N4948
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
0
-0.25A
-1.0A
N TE 1. R TIM = 7ns M IN U IM E AN E= 1M . 22P
O S: ISE E
AX. P T P D C
F
2. R TIM = 10ns M SO R EIM E AN E= 50
ISE E
AX. U C P D C
SE TIM BASE FO 50/100 ns /cm
T E
R
1cm
FIG.2 --FORWARD DERATING CURVE
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
AVERAGE FORWARD CURRENT
AMPERES
1.0
100
10
4
2
1 .0
0 .4
0 .2
0 .1
0 .06
0 .04
0 .02
0 .01
0 .6
0 .8
1 .0
1 .2
1 .4
1 .6
1.8
2.0
T
J
=25
P u ls e W id th = 3 0 0
µ
S
.8
.6
.4.
.2
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
25
50
75
100
0
125
150
175
AMBIENT TEMPERATURE,
FIG.4--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURREN
AMPERES
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,pF
100
60
40
20
10
50
8.3ms Single Half
Sine-Wave
40
30
20
4
2
1
.1
10
0
1
2
TJ=25
f=1MHz
4
6
8 10
20
40
60 80 100
.2
.4
1.0
2
4
10
20
40
100
NUMBER OF CYCLES AT 60 Hz
REVERSE VOLTAGE,VOLTS
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Document Number 0261081
BL
GALAXY ELECTRICAL
2.
MCU
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