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SB030

Description
0.6 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size41KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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SB030 Overview

0.6 A, 30 V, SILICON, SIGNAL DIODE

BL
FEATURES
GALAXY ELECTRICAL
SB020 --- SB040
VOLTAGE RANGE: 20 --- 40 V
CURRENT: 0.6 A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
R-1
MECHANICAL DATA
Case:JEDEC
R--1,molded
plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB020
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
SB030
30
21
30
0.6
SB040
40
28
40
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
20.0
A
Maximum instantaneous forw ard voltage
@ 0.6 A (Note 1)
Maximum reverse current
@T
A
=25
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.55
0.5
10.0
60
20
- 55 ---- + 125
- 55 ---- + 150
V
mA
pF
/W
at rated DC blocking voltage @T
A
=100
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test : 300 s pulse width,1% duty cy cle.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
Document Number 0266003
BL
GALAXY ELECTRICAL
1.

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SB030 SB020 SB040
Description 0.6 A, 30 V, SILICON, SIGNAL DIODE 0.6 A, 20 V, SILICON, SIGNAL DIODE 0.6 A, 40 V, SILICON, SIGNAL DIODE
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