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BSS110E-6288

Description
170mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size301KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
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BSS110E-6288 Overview

170mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN

BSS110E-6288 Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.17 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-92
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1

BSS110E-6288 Related Products

BSS110E-6288 BSS110E6288 BSS110E6296 BSS110E6325
Description 170mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN Small Signal Field-Effect Transistor, 0.17A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN Small Signal Field-Effect Transistor, 0.17A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Small Signal Field-Effect Transistor, 0.17A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown unknown unknown
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V 50 V 50 V
Maximum drain current (ID) 0.17 A 0.17 A 0.17 A 0.17 A
Maximum drain-source on-resistance 10 Ω 10 Ω 10 Ω 10 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code R-PDSO-G3 R-PDSO-G3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form SMALL OUTLINE SMALL OUTLINE CYLINDRICAL CYLINDRICAL
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL BOTTOM BOTTOM
Transistor component materials SILICON SILICON SILICON SILICON
ECCN code - EAR99 EAR99 EAR99
Other features - LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE LOGIC LEVEL COMPATIBLE
Maximum feedback capacitance (Crss) - 12 pF 12 pF 12 pF
transistor applications - SWITCHING SWITCHING SWITCHING
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