Small Signal Field-Effect Transistor, 0.17A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-92 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V |
| Maximum drain current (ID) | 0.17 A |
| Maximum drain-source on-resistance | 10 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 12 pF |
| JEDEC-95 code | TO-92 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | SMALL OUTLINE |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| BSS110E6288 | BSS110E-6288 | BSS110E6296 | BSS110E6325 | |
|---|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 0.17A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN | 170mA, 50V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN | Small Signal Field-Effect Transistor, 0.17A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Small Signal Field-Effect Transistor, 0.17A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 50 V | 50 V | 50 V | 50 V |
| Maximum drain current (ID) | 0.17 A | 0.17 A | 0.17 A | 0.17 A |
| Maximum drain-source on-resistance | 10 Ω | 10 Ω | 10 Ω | 10 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | O-PBCY-T3 | O-PBCY-T3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | NO | NO |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | DUAL | DUAL | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| ECCN code | EAR99 | - | EAR99 | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE | - | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| Maximum feedback capacitance (Crss) | 12 pF | - | 12 pF | 12 pF |
| transistor applications | SWITCHING | - | SWITCHING | SWITCHING |
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