BL
Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
FEATURES
Excellent H
FE
Linearity.
Complementary to KTA2015
Power dissipation.(P
C
=100mW)
Production specification
KTC4076W
Pb
Lead-free
APPLICATIONS
General purpose and switching application.
ORDERING INFORMATION
Type No.
KTC4076W
Marking
WO/WY
SOT-323
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j,
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
Value
35
30
5
500
100
-55~150
Units
V
V
V
mA
mW
℃
Document number: BL/SSSTF049
Rev.A
www.galaxycn.com
1
BL
Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
Production specification
KTC4076W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
Test conditions
I
C
=100μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=35V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=1V,I
C
=100mA
DC current gain
h
FE
V
CE
=6V,I
C
=400mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
f
T
C
ob
I
C
=100mA, I
B
= 10mA
V
CE
=6V, I
C
= 20mA
V
CB
=6V, I
E
=0mA
f=1MHz
7.0
25
0.1
0.25
V
MHz
pF
70
MIN
35
30
5
0.1
0.1
240
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION
Range
Marking
OF
O
h
FE(1)
Y
120-240
70-140
Document number: BL/SSSTF049
Rev.A
www.galaxycn.com
2
BL
Galaxy Electrical
NPN Silicon Epitaxial Planar Transistor
PACKAGE OUTLINE
Plastic surface mounted package
Production specification
KTC4076W
SOT-323
SOT-323
Dim
A
B
C
D
E
G
H
J
K
Min
1.8
1.15
0.15
0.25
1.2
0.02
2.1
Max
2.2
1.35
0.35
0.40
1.4
0.1
2.3
1.0Typical
0.1Typical
All Dimensions in mm
PACKAGE INFORMATION
Device
KTC4076W
Package
SOT-323
Shipping
3000/Tape&Reel
Document number: BL/SSSTF049
Rev.A
www.galaxycn.com
3