PD- 95899A
IRGPS40B120UP
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast IGBT
Features
• Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Super-247 Package.
• Lead-Free
C
V
CES
= 1200V
V
CE(on)
typ. = 3.12V
G
E
@ V
GE
= 15V,
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation.
I
CE
= 40A, Tj=25°C
Super-247™
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
1200
80
40
160
160
± 20
595
238
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Le
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Internal Emitter Inductance (5mm from package)
Min.
–––
–––
–––
20 (2)
–––
–––
Typ.
–––
0.24
–––
–––
6.0 (0.21)
13
Max.
0.20
–––
40
–––
–––
–––
Units
°C/W
N(kgf)
g (oz)
nH
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1
03/15/05
IRGPS40B120UP
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆
V
GE(th)
/
∆
T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage 1200 –––
Temperature Coeff. of Breakdown Voltage ––– 0.40
Collector-to-Emitter Saturation Voltage ––– 3.12
––– 3.39
––– 3.88
––– 4.24
Gate Threshold Voltage
4.0 5.0
Temperature Coeff. of Threshold Voltage ––– -12
Forward Transconductance
––– 30.5
Zero Gate Voltage Collector Current
––– –––
––– 100
Gate-to-Emitter Leakage Current
––– –––
Ref.Fig.
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 500µA
––– V/°C V
GE
= 0V, I
C
= 1.0mA, (25°C-125°C)
5, 6
3.40
I
C
= 40A
V
GE
= 15V
7, 9
3.71
V
I
C
= 50A
10
4.39
I
C
= 40A, T
J
= 125°C
4.79
I
C
= 50A, T
J
= 125°C
11
8, 9
6.0
V
CE
= V
GE
, I
C
= 250µA
––– mV/°C V
CE
= V
GE
, I
C
= 1.0mA, (25°C-125°C)
10 ,11
–––
S
V
CE
= 50V, I
C
= 40A, PW=80µs
500
µA
V
GE
= 0V, V
CE
= 1200V
1200
V
GE
= 0V, V
CE
= 1200V, T
J
= 125°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Qg
Qge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
510
I
C
= 40A
65
nC V
CC
= 600V
248
V
GE
= 15V
1750
µJ
I
C
= 40A, V
CC
= 600V
2050
V
GE
= 15V,R
G
= 4.7Ω, L =200µH
3800
Ls = 150nH
T
J
= 25°C
2300
T
J
= 125°C
2950
µJ
Energy losses include "tail" and
5250
diode reverse recovery.
99
I
C
= 40A, V
CC
= 600V
55
V
GE
= 15V, R
G
= 4.7Ω L =200µH
365
ns
Ls = 150nH, T
J
= 125°C
33
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
–––
f = 1.0MHz
T
J
= 150°C, I
C
= 160A, Vp =1200V
FULL SQUARE
V
CC
= 1000V, V
GE
= +15V to 0V
R
G
= 4.7Ω
T
J
= 150°C, Vp =1200V
10 ––– –––
µs V
CC
= 900V, V
GE
= +15V to 0V,
R
G
= 4.7Ω
Typ.
340
43
165
1400
1650
3050
1950
2200
4150
76
39
332
25
4300
270
160
Ref.Fig.
17
CT1
CT4
WF1
WF2
12,14
13, 15
CT4
WF1
WF2
16
4
SCSOA
Short Circuit Safe Operting Area
CT3
WF4
Note:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100µH, R
G
= 4.7Ω.
2
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IRGPS40B120UP
100
700
600
80
500
Ptot (W)
60
IC (A)
400
300
200
40
20
100
0
0
20
40
60
80
100 120 140 160
T C (°C)
0
0
50
100
T C (°C)
150
200
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
1000
100
2 µs
10 µs
100
IC (A)
10
100 µs
1ms
IC A)
10
1
10
100
1000
10000
1
DC
10ms
0.1
1
10
100
VCE (V)
1000
10000
VCE (V)
Fig. 3
- Forward SOA
T
C
= 25°C; T
JS
≤
150°C
Fig. 4
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
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IRGPS40B120UP
120
100
80
ICE (A)
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
70
60
50
40
30
20
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
40
20
10
0
0
1
2
3
VCE (V)
4
5
0
0
2
VCE (V)
4
6
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80µs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80µs
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
500
450
400
350
300
250
200
150
T J = 25°C
T J = 125°C
60
ICE (A)
40
20
100
50
TJ = 125°C
T J = 25°C
0
5
10
VGE (V)
15
20
0
0
2
VCE (V)
4
6
0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80µs
Fig. 8
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
4
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IRGPS40B120UP
20
18
16
14
VCE (V)
VCE (V)
20
18
16
14
ICE = 20A
ICE = 40A
ICE = 80A
12
10
8
6
4
2
5
10
VGE (V)
15
20
5
10
VGE (V)
15
20
ICE = 20A
ICE = 40A
ICE = 80A
12
10
8
6
4
2
0
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
20
18
16
14
12
10
8
6
4
2
5
10
VGE (V)
15
20
ICE = 20A
ICE = 40A
ICE = 80A
VCE (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 125°C
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