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M36P0R9070E0

Description
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
File Size422KB,23 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
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M36P0R9070E0 Overview

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

M36P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Feature summary
Multi-Chip Package
– 1 die of 512 Mbit (32Mb x 16, Multiple
Bank, Multi-Level, Burst) Flash Memory
– 1
die of 128Mbit (8Mb x16)
PSRAM
Supply voltage
– V
DDF
= V
CCP
= V
DDQ
= 1.7 to 1.95V
– V
PPF
= 9V for fast program
Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
ECOPACK® package available
FBGA
TFBGA107 (ZAC)
Flash memory
Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP
F
for Block Lock-Down
– Absolute Write Protection with V
PPF
= V
SS
Synchronous / Asynchronous Read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 96ns
Programming time
– 4.2µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array: 64 Mbit banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Security
– 2112-bit user programmable OTP Cells
– 64-bit unique device number
100,000 program/erase cycles per block
Common Flash Interface (CFI)
PSRAM
Access time: 70ns
User-selectable operating modes
– Asynchronous modes: Random Read, and
Write, Page Read
– Synchronous modes: NOR-Flash, Full
Synchronous (Burst Read and Write)
Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent Read Within Page: 20ns
Burst Read
– Fixed Length (4, 8, 16 or 32 Words) or
Continuous
– Maximum Clock Frequency: 80MHz
Low Power Consumption
– Active Current: < 25mA
– Standby Current: 200µA
– Deep Power-Down Current: 10µA
Low Power Features
– Partial Array Self Refresh (PASR)
– Deep Power-Down (DPD) Mode
November 2007
Rev 3
1/23
www.numonyx.com
1

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M36P0R9070E0 M36P0R9070E0ZAC M36P0R9070E0ZACF M36P0R9070E0ZACE
Description 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Is it Rohs certified? - conform to conform to conform to
Parts packaging code - BGA BGA BGA
package instruction - TFBGA, BGA107,9X12,32 TFBGA, BGA107,9X12,32 TFBGA, BGA107,9X12,32
Contacts - 107 107 107
Reach Compliance Code - unknow unknow unknow
Maximum access time - 96 ns 96 ns 96 ns
Other features - SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 code - R-PBGA-B107 R-PBGA-B107 R-PBGA-B107
length - 11 mm 11 mm 11 mm
memory density - 536870912 bi 536870912 bi 536870912 bi
Memory IC Type - MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT
memory width - 16 16 16
Mixed memory types - FLASH+PSRAM FLASH+PSRAM FLASH+PSRAM
Number of functions - 1 1 1
Number of terminals - 107 107 107
word count - 33554432 words 33554432 words 33554432 words
character code - 32000000 32000000 32000000
Operating mode - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature - 85 °C 85 °C 85 °C
Minimum operating temperature - -30 °C -30 °C -30 °C
organize - 32MX16 32MX16 32MX16
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - TFBGA TFBGA TFBGA
Encapsulate equivalent code - BGA107,9X12,32 BGA107,9X12,32 BGA107,9X12,32
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply - 1.8 V 1.8 V 1.8 V
Certification status - Not Qualified Not Qualified Not Qualified
Maximum seat height - 1.2 mm 1.2 mm 1.2 mm
Maximum standby current - 0.0002 A 0.0002 A 0.0002 A
Maximum supply voltage (Vsup) - 1.95 V 1.95 V 1.95 V
Minimum supply voltage (Vsup) - 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) - 1.8 V 1.8 V 1.8 V
surface mount - YES YES YES
technology - CMOS CMOS CMOS
Temperature level - OTHER OTHER OTHER
Terminal form - BALL BALL BALL
Terminal pitch - 0.8 mm 0.8 mm 0.8 mm
Terminal location - BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width - 8 mm 8 mm 8 mm

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