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M36P0R9070E0ZACF

Description
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Categorystorage    storage   
File Size422KB,23 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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M36P0R9070E0ZACF Overview

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

M36P0R9070E0ZACF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA, BGA107,9X12,32
Contacts107
Reach Compliance Codeunknow
Maximum access time96 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 codeR-PBGA-B107
length11 mm
memory density536870912 bi
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesFLASH+PSRAM
Number of functions1
Number of terminals107
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA107,9X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.0002 A
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
M36P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Feature summary
Multi-Chip Package
– 1 die of 512 Mbit (32Mb x 16, Multiple
Bank, Multi-Level, Burst) Flash Memory
– 1
die of 128Mbit (8Mb x16)
PSRAM
Supply voltage
– V
DDF
= V
CCP
= V
DDQ
= 1.7 to 1.95V
– V
PPF
= 9V for fast program
Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
ECOPACK® package available
FBGA
TFBGA107 (ZAC)
Flash memory
Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP
F
for Block Lock-Down
– Absolute Write Protection with V
PPF
= V
SS
Synchronous / Asynchronous Read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 96ns
Programming time
– 4.2µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array: 64 Mbit banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Security
– 2112-bit user programmable OTP Cells
– 64-bit unique device number
100,000 program/erase cycles per block
Common Flash Interface (CFI)
PSRAM
Access time: 70ns
User-selectable operating modes
– Asynchronous modes: Random Read, and
Write, Page Read
– Synchronous modes: NOR-Flash, Full
Synchronous (Burst Read and Write)
Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent Read Within Page: 20ns
Burst Read
– Fixed Length (4, 8, 16 or 32 Words) or
Continuous
– Maximum Clock Frequency: 80MHz
Low Power Consumption
– Active Current: < 25mA
– Standby Current: 200µA
– Deep Power-Down Current: 10µA
Low Power Features
– Partial Array Self Refresh (PASR)
– Deep Power-Down (DPD) Mode
November 2007
Rev 3
1/23
www.numonyx.com
1

M36P0R9070E0ZACF Related Products

M36P0R9070E0ZACF M36P0R9070E0 M36P0R9070E0ZAC M36P0R9070E0ZACE
Description 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Is it Rohs certified? conform to - conform to conform to
Parts packaging code BGA - BGA BGA
package instruction TFBGA, BGA107,9X12,32 - TFBGA, BGA107,9X12,32 TFBGA, BGA107,9X12,32
Contacts 107 - 107 107
Reach Compliance Code unknow - unknow unknow
Maximum access time 96 ns - 96 ns 96 ns
Other features SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 - SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 code R-PBGA-B107 - R-PBGA-B107 R-PBGA-B107
length 11 mm - 11 mm 11 mm
memory density 536870912 bi - 536870912 bi 536870912 bi
Memory IC Type MEMORY CIRCUIT - MEMORY CIRCUIT MEMORY CIRCUIT
memory width 16 - 16 16
Mixed memory types FLASH+PSRAM - FLASH+PSRAM FLASH+PSRAM
Number of functions 1 - 1 1
Number of terminals 107 - 107 107
word count 33554432 words - 33554432 words 33554432 words
character code 32000000 - 32000000 32000000
Operating mode ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C - 85 °C 85 °C
Minimum operating temperature -30 °C - -30 °C -30 °C
organize 32MX16 - 32MX16 32MX16
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA - TFBGA TFBGA
Encapsulate equivalent code BGA107,9X12,32 - BGA107,9X12,32 BGA107,9X12,32
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
power supply 1.8 V - 1.8 V 1.8 V
Certification status Not Qualified - Not Qualified Not Qualified
Maximum seat height 1.2 mm - 1.2 mm 1.2 mm
Maximum standby current 0.0002 A - 0.0002 A 0.0002 A
Maximum supply voltage (Vsup) 1.95 V - 1.95 V 1.95 V
Minimum supply voltage (Vsup) 1.7 V - 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V - 1.8 V 1.8 V
surface mount YES - YES YES
technology CMOS - CMOS CMOS
Temperature level OTHER - OTHER OTHER
Terminal form BALL - BALL BALL
Terminal pitch 0.8 mm - 0.8 mm 0.8 mm
Terminal location BOTTOM - BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
width 8 mm - 8 mm 8 mm

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