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M36P0R9070E0ZACE

Description
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Categorystorage    storage   
File Size422KB,23 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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M36P0R9070E0ZACE Overview

512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package

M36P0R9070E0ZACE Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeBGA
package instructionTFBGA, BGA107,9X12,32
Contacts107
Reach Compliance Codeunknow
Maximum access time96 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 codeR-PBGA-B107
length11 mm
memory density536870912 bi
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesFLASH+PSRAM
Number of functions1
Number of terminals107
word count33554432 words
character code32000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-30 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA107,9X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.0002 A
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width8 mm
Base Number Matches1
M36P0R9070E0
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Feature summary
Multi-Chip Package
– 1 die of 512 Mbit (32Mb x 16, Multiple
Bank, Multi-Level, Burst) Flash Memory
– 1
die of 128Mbit (8Mb x16)
PSRAM
Supply voltage
– V
DDF
= V
CCP
= V
DDQ
= 1.7 to 1.95V
– V
PPF
= 9V for fast program
Electronic signature
– Manufacturer Code: 20h
– Device Code: 8819
ECOPACK® package available
FBGA
TFBGA107 (ZAC)
Flash memory
Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP
F
for Block Lock-Down
– Absolute Write Protection with V
PPF
= V
SS
Synchronous / Asynchronous Read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 96ns
Programming time
– 4.2µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple bank memory array: 64 Mbit banks
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
Security
– 2112-bit user programmable OTP Cells
– 64-bit unique device number
100,000 program/erase cycles per block
Common Flash Interface (CFI)
PSRAM
Access time: 70ns
User-selectable operating modes
– Asynchronous modes: Random Read, and
Write, Page Read
– Synchronous modes: NOR-Flash, Full
Synchronous (Burst Read and Write)
Asynchronous Page Read
– Page Size: 4, 8 or 16 Words
– Subsequent Read Within Page: 20ns
Burst Read
– Fixed Length (4, 8, 16 or 32 Words) or
Continuous
– Maximum Clock Frequency: 80MHz
Low Power Consumption
– Active Current: < 25mA
– Standby Current: 200µA
– Deep Power-Down Current: 10µA
Low Power Features
– Partial Array Self Refresh (PASR)
– Deep Power-Down (DPD) Mode
November 2007
Rev 3
1/23
www.numonyx.com
1

M36P0R9070E0ZACE Related Products

M36P0R9070E0ZACE M36P0R9070E0 M36P0R9070E0ZAC M36P0R9070E0ZACF
Description 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Is it Rohs certified? conform to - conform to conform to
Parts packaging code BGA - BGA BGA
package instruction TFBGA, BGA107,9X12,32 - TFBGA, BGA107,9X12,32 TFBGA, BGA107,9X12,32
Contacts 107 - 107 107
Reach Compliance Code unknow - unknow unknow
Maximum access time 96 ns - 96 ns 96 ns
Other features SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 - SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16 SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 8M X 16
JESD-30 code R-PBGA-B107 - R-PBGA-B107 R-PBGA-B107
length 11 mm - 11 mm 11 mm
memory density 536870912 bi - 536870912 bi 536870912 bi
Memory IC Type MEMORY CIRCUIT - MEMORY CIRCUIT MEMORY CIRCUIT
memory width 16 - 16 16
Mixed memory types FLASH+PSRAM - FLASH+PSRAM FLASH+PSRAM
Number of functions 1 - 1 1
Number of terminals 107 - 107 107
word count 33554432 words - 33554432 words 33554432 words
character code 32000000 - 32000000 32000000
Operating mode ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 85 °C - 85 °C 85 °C
Minimum operating temperature -30 °C - -30 °C -30 °C
organize 32MX16 - 32MX16 32MX16
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA - TFBGA TFBGA
Encapsulate equivalent code BGA107,9X12,32 - BGA107,9X12,32 BGA107,9X12,32
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
power supply 1.8 V - 1.8 V 1.8 V
Certification status Not Qualified - Not Qualified Not Qualified
Maximum seat height 1.2 mm - 1.2 mm 1.2 mm
Maximum standby current 0.0002 A - 0.0002 A 0.0002 A
Maximum supply voltage (Vsup) 1.95 V - 1.95 V 1.95 V
Minimum supply voltage (Vsup) 1.7 V - 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V - 1.8 V 1.8 V
surface mount YES - YES YES
technology CMOS - CMOS CMOS
Temperature level OTHER - OTHER OTHER
Terminal form BALL - BALL BALL
Terminal pitch 0.8 mm - 0.8 mm 0.8 mm
Terminal location BOTTOM - BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED
width 8 mm - 8 mm 8 mm

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