M39P0R8070E2ZADF datasheet, PDF

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M39P0R8070E2ZADF: Description256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package; Categorystorage storage; File Size437KB，24 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com; Environmental Compliance

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M39P0R8070E2ZADF Overview

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

M39P0R8070E2ZADF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Numonyx ( Micron )
Parts packaging code	BGA
package instruction	TFBGA, BGA105,9X12,32
Contacts	105
Reach Compliance Code	unknow
Maximum access time	96 ns
Other features	PSRAM IS ORGANIZED AS 2M X 16
JESD-30 code	R-PBGA-B105
length	11 mm
memory density	268435456 bi
Memory IC Type	MEMORY CIRCUIT
memory width	16
Mixed memory types	FLASH+SDRAM
Number of functions	1
Number of terminals	105
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA105,9X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	9 mm

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M39P0R8070E2

M39P0R9070E2

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory

128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

Feature summary

■

Multi-Chip Package

– 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb

x 16, Multiple Bank, Multi-Level, Burst)

Flash memory

– 1 die of 128 Mbit (4 Banks of 2Mb x16)

Low

Power Synchronous Dynamic RAM

Supply voltage

– V

DDF

= V

DDS

= V

DDQ

= 1.7 to 1.95V

– V

PPF

= 9V for fast program

Electronic signature

– Manufacturer Code: 20h

– 256 Mbit Device Code: 8818

– 512 Mbit Device Code: 8819

Package

– ECOPACK® (RoHS compliant)

Synchronous / Asynchronous Read

– Synchronous Burst Read mode:

108MHz, 66MHz

– Asynchronous Page Read mode

– Random Access: 96ns

Programming time

– 4.2µs typical Word program time using

Buffer Enhanced Factory Program

command

Memory organization

– Multiple Bank memory array: 32 Mbit

Banks (256Mb devices); 64 Mbit Banks

(512Mb devices)

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

Dual operations

– program/erase in one Bank while read in

others

– No delay between read and write

operations

FBGA

■

TFBGA105 (ZAD)

9 x 11mm

■

100,000 program/erase cycles per block

Security

– 64-bit unique device number

– 2112-bit user programmable OTP Cells

Block locking

– All Blocks locked at power-up

– Any combination of Blocks can be locked

with zero latency

– WP

for Block Lock-Down

– Absolute Write Protection with V

PPF

= V

Common Flash Interface (CFI)

128 Mbit Synchronous Dynamic RAM

– Organized as 4 Banks of 2 MWords, each

16 bits wide

Synchronous Burst Read and Write

– Fixed burst lengths: 1, 2, 4, 8 Words or Full

Page

– Burst Types: Sequential and Interleaved

– Maximum Clock frequency: 104MHz

Automatic and controlled Precharge

Low power features:

– Partial Array Self Refresh (PASR)

– Automatic Temperature Compensated Self

Refresh (TCSR)

– Driver Strength (DS)

– Deep Power-Down Mode

Auto Refresh and Self Refresh

■

Flash memory

■

LPSDRAM

■

November 2007

Rev 2

1/24

www.numonyx.com

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Description	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Is it lead-free?	Lead free	-	Lead free	Lead free	Lead free	-
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	-
Maker	Numonyx ( Micron )	-	Numonyx ( Micron )	Numonyx ( Micron )	Numonyx ( Micron )	-
Parts packaging code	BGA	-	BGA	BGA	BGA	-
package instruction	TFBGA, BGA105,9X12,32	-	TFBGA, BGA105,9X12,32	TFBGA, BGA105,9X12,32	TFBGA, BGA105,9X12,32	-
Contacts	105	-	105	105	105	-
Reach Compliance Code	unknow	-	unknow	unknow	unknow	-
Maximum access time	96 ns	-	96 ns	96 ns	96 ns	-
Other features	PSRAM IS ORGANIZED AS 2M X 16	-	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16	-
JESD-30 code	R-PBGA-B105	-	R-PBGA-B105	R-PBGA-B105	R-PBGA-B105	-
length	11 mm	-	11 mm	11 mm	11 mm	-
memory density	268435456 bi	-	268435456 bi	536870912 bi	536870912 bi	-
Memory IC Type	MEMORY CIRCUIT	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	-
memory width	16	-	16	16	16	-
Mixed memory types	FLASH+SDRAM	-	FLASH+SDRAM	FLASH+SDRAM	FLASH+SDRAM	-
Number of functions	1	-	1	1	1	-
Number of terminals	105	-	105	105	105	-
word count	16777216 words	-	16777216 words	33554432 words	33554432 words	-
character code	16000000	-	16000000	32000000	32000000	-
Operating mode	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C	-
Minimum operating temperature	-25 °C	-	-25 °C	-25 °C	-25 °C	-
organize	16MX16	-	16MX16	32MX16	32MX16	-
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
encapsulated code	TFBGA	-	TFBGA	TFBGA	TFBGA	-
Encapsulate equivalent code	BGA105,9X12,32	-	BGA105,9X12,32	BGA105,9X12,32	BGA105,9X12,32	-
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	-
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
power supply	1.8 V	-	1.8 V	1.8 V	1.8 V	-
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	-
Maximum seat height	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	-
Maximum supply voltage (Vsup)	1.95 V	-	1.95 V	1.95 V	1.95 V	-
Minimum supply voltage (Vsup)	1.7 V	-	1.7 V	1.7 V	1.7 V	-
Nominal supply voltage (Vsup)	1.8 V	-	1.8 V	1.8 V	1.8 V	-
surface mount	YES	-	YES	YES	YES	-
technology	CMOS	-	CMOS	CMOS	CMOS	-
Temperature level	OTHER	-	OTHER	OTHER	OTHER	-
Terminal form	BALL	-	BALL	BALL	BALL	-
Terminal pitch	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	-
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	-
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-
width	9 mm	-	9 mm	9 mm	9 mm	-

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