M39P0R9070E2 datasheet, PDF - EEWORLD Datasheet

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M39P0R9070E2: Description256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package; File Size437KB，24 Pages; ManufacturerNumonyx ( Micron ); Websitehttps://www.micron.com

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M39P0R9070E2 Overview

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

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M39P0R8070E2

M39P0R9070E2

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory

128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

Feature summary

■

Multi-Chip Package

– 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb

x 16, Multiple Bank, Multi-Level, Burst)

Flash memory

– 1 die of 128 Mbit (4 Banks of 2Mb x16)

Low

Power Synchronous Dynamic RAM

Supply voltage

– V

DDF

= V

DDS

= V

DDQ

= 1.7 to 1.95V

– V

PPF

= 9V for fast program

Electronic signature

– Manufacturer Code: 20h

– 256 Mbit Device Code: 8818

– 512 Mbit Device Code: 8819

Package

– ECOPACK® (RoHS compliant)

Synchronous / Asynchronous Read

– Synchronous Burst Read mode:

108MHz, 66MHz

– Asynchronous Page Read mode

– Random Access: 96ns

Programming time

– 4.2µs typical Word program time using

Buffer Enhanced Factory Program

command

Memory organization

– Multiple Bank memory array: 32 Mbit

Banks (256Mb devices); 64 Mbit Banks

(512Mb devices)

– Four Extended Flash Array (EFA) Blocks of

64 Kbits

Dual operations

– program/erase in one Bank while read in

others

– No delay between read and write

operations

FBGA

■

TFBGA105 (ZAD)

9 x 11mm

■

100,000 program/erase cycles per block

Security

– 64-bit unique device number

– 2112-bit user programmable OTP Cells

Block locking

– All Blocks locked at power-up

– Any combination of Blocks can be locked

with zero latency

– WP

for Block Lock-Down

– Absolute Write Protection with V

PPF

= V

Common Flash Interface (CFI)

128 Mbit Synchronous Dynamic RAM

– Organized as 4 Banks of 2 MWords, each

16 bits wide

Synchronous Burst Read and Write

– Fixed burst lengths: 1, 2, 4, 8 Words or Full

Page

– Burst Types: Sequential and Interleaved

– Maximum Clock frequency: 104MHz

Automatic and controlled Precharge

Low power features:

– Partial Array Self Refresh (PASR)

– Automatic Temperature Compensated Self

Refresh (TCSR)

– Driver Strength (DS)

– Deep Power-Down Mode

Auto Refresh and Self Refresh

■

Flash memory

■

LPSDRAM

■

November 2007

Rev 2

1/24

www.numonyx.com

M39P0R9070E2 Related Products

	M39P0R9070E2	M39P0R8070E2	M39P0R8070E2ZADF	M39P0R8070E2ZADE	M39P0R9070E2ZADE	M39P0R9070E2ZADF
Description	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package	256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Is it lead-free?	-	-	Lead free	Lead free	Lead free	Lead free
Is it Rohs certified?	-	-	conform to	conform to	conform to	conform to
Maker	-	-	Numonyx ( Micron )	Numonyx ( Micron )	Numonyx ( Micron )	Numonyx ( Micron )
Parts packaging code	-	-	BGA	BGA	BGA	BGA
package instruction	-	-	TFBGA, BGA105,9X12,32	TFBGA, BGA105,9X12,32	TFBGA, BGA105,9X12,32	TFBGA, BGA105,9X12,32
Contacts	-	-	105	105	105	105
Reach Compliance Code	-	-	unknow	unknow	unknow	unknow
Maximum access time	-	-	96 ns	96 ns	96 ns	96 ns
Other features	-	-	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16
JESD-30 code	-	-	R-PBGA-B105	R-PBGA-B105	R-PBGA-B105	R-PBGA-B105
length	-	-	11 mm	11 mm	11 mm	11 mm
memory density	-	-	268435456 bi	268435456 bi	536870912 bi	536870912 bi
Memory IC Type	-	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	-	-	16	16	16	16
Mixed memory types	-	-	FLASH+SDRAM	FLASH+SDRAM	FLASH+SDRAM	FLASH+SDRAM
Number of functions	-	-	1	1	1	1
Number of terminals	-	-	105	105	105	105
word count	-	-	16777216 words	16777216 words	33554432 words	33554432 words
character code	-	-	16000000	16000000	32000000	32000000
Operating mode	-	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	-	-	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-	-	-25 °C	-25 °C	-25 °C	-25 °C
organize	-	-	16MX16	16MX16	32MX16	32MX16
Package body material	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	-	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	-	-	BGA105,9X12,32	BGA105,9X12,32	BGA105,9X12,32	BGA105,9X12,32
Package shape	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	-	-	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	-	-	1.95 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	-	-	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	-	-	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	-	-	YES	YES	YES	YES
technology	-	-	CMOS	CMOS	CMOS	CMOS
Temperature level	-	-	OTHER	OTHER	OTHER	OTHER
Terminal form	-	-	BALL	BALL	BALL	BALL
Terminal pitch	-	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	-	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	-	-	9 mm	9 mm	9 mm	9 mm

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