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M39P0R9070E2ZADE

Description
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Categorystorage    storage   
File Size437KB,24 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
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M39P0R9070E2ZADE Overview

256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package

M39P0R9070E2ZADE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instructionTFBGA, BGA105,9X12,32
Contacts105
Reach Compliance Codeunknow
Maximum access time96 ns
Other featuresPSRAM IS ORGANIZED AS 2M X 16
JESD-30 codeR-PBGA-B105
length11 mm
memory density536870912 bi
Memory IC TypeMEMORY CIRCUIT
memory width16
Mixed memory typesFLASH+SDRAM
Number of functions1
Number of terminals105
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize32MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA105,9X12,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width9 mm
Base Number Matches1
M39P0R8070E2
M39P0R9070E2
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory
128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Feature summary
Multi-Chip Package
– 1 die of 256 (16Mb x 16) or 512 Mbit (32Mb
x 16, Multiple Bank, Multi-Level, Burst)
Flash memory
– 1 die of 128 Mbit (4 Banks of 2Mb x16)
Low
Power Synchronous Dynamic RAM
Supply voltage
– V
DDF
= V
DDS
= V
DDQ
= 1.7 to 1.95V
– V
PPF
= 9V for fast program
Electronic signature
– Manufacturer Code: 20h
– 256 Mbit Device Code: 8818
– 512 Mbit Device Code: 8819
Package
– ECOPACK® (RoHS compliant)
Synchronous / Asynchronous Read
– Synchronous Burst Read mode:
108MHz, 66MHz
– Asynchronous Page Read mode
– Random Access: 96ns
Programming time
– 4.2µs typical Word program time using
Buffer Enhanced Factory Program
command
Memory organization
– Multiple Bank memory array: 32 Mbit
Banks (256Mb devices); 64 Mbit Banks
(512Mb devices)
– Four Extended Flash Array (EFA) Blocks of
64 Kbits
Dual operations
– program/erase in one Bank while read in
others
– No delay between read and write
operations
FBGA
TFBGA105 (ZAD)
9 x 11mm
100,000 program/erase cycles per block
Security
– 64-bit unique device number
– 2112-bit user programmable OTP Cells
Block locking
– All Blocks locked at power-up
– Any combination of Blocks can be locked
with zero latency
– WP
F
for Block Lock-Down
– Absolute Write Protection with V
PPF
= V
SS
Common Flash Interface (CFI)
128 Mbit Synchronous Dynamic RAM
– Organized as 4 Banks of 2 MWords, each
16 bits wide
Synchronous Burst Read and Write
– Fixed burst lengths: 1, 2, 4, 8 Words or Full
Page
– Burst Types: Sequential and Interleaved
– Maximum Clock frequency: 104MHz
Automatic and controlled Precharge
Low power features:
– Partial Array Self Refresh (PASR)
– Automatic Temperature Compensated Self
Refresh (TCSR)
– Driver Strength (DS)
– Deep Power-Down Mode
Auto Refresh and Self Refresh
Flash memory
LPSDRAM
November 2007
Rev 2
1/24
www.numonyx.com
1

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M39P0R9070E2ZADE M39P0R8070E2 M39P0R8070E2ZADF M39P0R8070E2ZADE M39P0R9070E2ZADF M39P0R9070E2
Description 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package 256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
Is it lead-free? Lead free - Lead free Lead free Lead free -
Is it Rohs certified? conform to - conform to conform to conform to -
Maker Numonyx ( Micron ) - Numonyx ( Micron ) Numonyx ( Micron ) Numonyx ( Micron ) -
Parts packaging code BGA - BGA BGA BGA -
package instruction TFBGA, BGA105,9X12,32 - TFBGA, BGA105,9X12,32 TFBGA, BGA105,9X12,32 TFBGA, BGA105,9X12,32 -
Contacts 105 - 105 105 105 -
Reach Compliance Code unknow - unknow unknow unknow -
Maximum access time 96 ns - 96 ns 96 ns 96 ns -
Other features PSRAM IS ORGANIZED AS 2M X 16 - PSRAM IS ORGANIZED AS 2M X 16 PSRAM IS ORGANIZED AS 2M X 16 PSRAM IS ORGANIZED AS 2M X 16 -
JESD-30 code R-PBGA-B105 - R-PBGA-B105 R-PBGA-B105 R-PBGA-B105 -
length 11 mm - 11 mm 11 mm 11 mm -
memory density 536870912 bi - 268435456 bi 268435456 bi 536870912 bi -
Memory IC Type MEMORY CIRCUIT - MEMORY CIRCUIT MEMORY CIRCUIT MEMORY CIRCUIT -
memory width 16 - 16 16 16 -
Mixed memory types FLASH+SDRAM - FLASH+SDRAM FLASH+SDRAM FLASH+SDRAM -
Number of functions 1 - 1 1 1 -
Number of terminals 105 - 105 105 105 -
word count 33554432 words - 16777216 words 16777216 words 33554432 words -
character code 32000000 - 16000000 16000000 32000000 -
Operating mode SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS -
Maximum operating temperature 85 °C - 85 °C 85 °C 85 °C -
Minimum operating temperature -25 °C - -25 °C -25 °C -25 °C -
organize 32MX16 - 16MX16 16MX16 32MX16 -
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
encapsulated code TFBGA - TFBGA TFBGA TFBGA -
Encapsulate equivalent code BGA105,9X12,32 - BGA105,9X12,32 BGA105,9X12,32 BGA105,9X12,32 -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form GRID ARRAY, THIN PROFILE, FINE PITCH - GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
power supply 1.8 V - 1.8 V 1.8 V 1.8 V -
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified -
Maximum seat height 1.2 mm - 1.2 mm 1.2 mm 1.2 mm -
Maximum supply voltage (Vsup) 1.95 V - 1.95 V 1.95 V 1.95 V -
Minimum supply voltage (Vsup) 1.7 V - 1.7 V 1.7 V 1.7 V -
Nominal supply voltage (Vsup) 1.8 V - 1.8 V 1.8 V 1.8 V -
surface mount YES - YES YES YES -
technology CMOS - CMOS CMOS CMOS -
Temperature level OTHER - OTHER OTHER OTHER -
Terminal form BALL - BALL BALL BALL -
Terminal pitch 0.8 mm - 0.8 mm 0.8 mm 0.8 mm -
Terminal location BOTTOM - BOTTOM BOTTOM BOTTOM -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
width 9 mm - 9 mm 9 mm 9 mm -
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