SKM200GB101D datasheet, PDF - EEWORLD Datasheet

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SKM200GB101D: DescriptionInsulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size330KB，8 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SKM200GB101D Overview

Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel,

SKM200GB101D Parametric

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	200 A
Collector-emitter maximum voltage	1000 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	2500 W
Maximum power dissipation(Abs)	1250 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	1100 ns
Nominal on time (ton)	190 ns
VCEsat-Max	4 V
Base Number Matches	1

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SKM200GB101D Related Products

	SKM200GB101D	SKM200GAL102D	SKM200GAL101D	SKM200GAR122D	SKM200GAL122D	SKM200GB102D	SKM200GB122D	SKM200GAR101D	SKM200GAR121D
Description	Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel,	Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel,	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel,	Insulated Gate Bipolar Transistor, 200A I(C), 1000V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel
package instruction	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7	FLANGE MOUNT, R-PUFM-X7
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow	unknow
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Maximum collector current (IC)	200 A	200 A	200 A	200 A	200 A	200 A	200 A	200 A	200 A
Collector-emitter maximum voltage	1000 V	1000 V	1000 V	1200 V	1200 V	1000 V	1200 V	1000 V	1200 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V	6.5 V
Gate-emitter maximum voltage	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V	20 V
JESD-30 code	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7	R-PUFM-X7
Number of components	2	1	1	1	1	2	2	1	1
Number of terminals	7	7	7	7	7	7	7	7	7
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	2500 W	1250 W	1250 W	1250 W	1250 W	2500 W	2500 W	1250 W	1250 W
Maximum power dissipation(Abs)	1250 W	1250 W	1250 W	1250 W	1250 W	1250 W	1250 W	1250 W	1250 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Terminal location	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER	UPPER
transistor applications	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL	MOTOR CONTROL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal off time (toff)	1100 ns	1100 ns	1100 ns	1100 ns	1100 ns	1100 ns	1100 ns	1100 ns	1100 ns
Nominal on time (ton)	190 ns	190 ns	190 ns	190 ns	190 ns	190 ns	190 ns	190 ns	190 ns
VCEsat-Max	4 V	4 V	4 V	4 V	4 V	4 V	4 V	4 V	4 V
Maker	-	-	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON	SEMIKRON

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