MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM3742-4SL-341
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 25.5dBm
Single Carrier Level
HIGH POWER
P1dB=36.5dBm at 3.3GHz to 3.6GHz
HIGH GAIN
G1dB=10.0dB at 3.3GHz to 3.6GHz
BROAD BAND INTERNALLY MATCHED FET
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
rd
Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
SYMBOL
P
1dB
G
1dB
I
DS1
ΔG
( Ta= 25
°
C )
UNIT
dBm
dB
A
dB
%
dBc
A
°
C
MIN.
35.5
10.0
⎯
⎯
⎯
-42
⎯
⎯
TYP. MAX.
36.5
⎯
⎯
1.1
⎯
37
-45
1.1
⎯
⎯
1.3
±0.6
⎯
⎯
1.3
80
CONDITIONS
VDS= 10V
f= 3.3 to 3.6GHz
η
add
IM3
IDS2
ΔTch
Two-Tone Test
Po=25.5dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
Recommended Gate Resistance(Rg): 150
Ω
(Max.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
SYMBOL
( Ta= 25
°
C )
UNIT
mS
V
A
V
°
C/W
MIN.
⎯
-1.0
⎯
-5
⎯
TYP.
900
-2.5
2.6
⎯
4.5
MAX.
⎯
-4.0
⎯
⎯
6.5
gm
V
GSoff
I
DSS
V
GSO
R
th(c-c)
CONDITIONS
V
DS
= 3V
I
DS
= 1.5A
V
DS
=
3V
I
DS
= 15mA
V
DS
=
3V
V
GS
= 0V
I
GS
= -50μA
Channel to Case
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul., 2006
TIM3742-4SL-341
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25
°
C)
Channel Temperature
Storage Temperature
( Ta= 25
°
C )
SYMBOL
V
DS
V
GS
I
DS
P
T
T
ch
T
stg
UNIT
V
V
A
W
°
C
°
C
RATING
15
-5
3.5
23.1
175
-65 to +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM3472-4SL-341
POWER
Dissipation vs. Case Temperature
Power
DISSIPATION VS. CASE TEMPERATURE
30
25
20
P
T
(W)
PT (W)
15
10
5
0
0
40
80
Tc (℃)
120
160
200
Tc(°C)
-
10
IM3 vs. Output Power Characteristics
V
DS
= 10 V
I
DS
≅1.1A
freq.= 3.6GHz
Δ
f= 5MHz
-20
-30
IM3 (dBc)
IM
3
-40
-50
-60
21
23
25
27
29
31
Po(dBm)@ Single Carrier Level
4
Embedded System
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