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RT1P144X

Description
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
File Size49KB,3 Pages
ManufacturerIsahaya
Websitehttp://www.idc-com.co.jp/
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RT1P144X Overview

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

R 1 1 4 SERIES
TP4X
Transistor
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
RT1P144X is a one chip transistor
with built-in bias resistor,NPN type is RT1N144X.
RT1P144U
1.6
OUTLINE DRAWING       UNIT
   
:mm
RT1P144C
2.5
0.4
0.5
1.5
0.5
FEATURE
Built-in bias resistor (R1=10kΩ,R2=47kΩ).
0.5
0.4
0.8
0.3
0.95
2.9
1.90
1.6
1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.7
0.15
1.1
0.55
0.8
0.16
0∼0.1
R1
B
(IN)
R2
C
(OUT)
         JEITA
    
:−
JEDEC
:−
Terminal Connector
:Base
:Emitter
:Collector
RT1P144M
2.1
0.425
1.25
0.425
JEITA
:SC-59
JEDEC
:Similar to TO-236
Terminal Connector
:Base
:Emitter
:Collector
RT1P144S
4.0
E
(GND)
0.65
0.3
3.0
0∼0.1
Equivalent circuit
0.95
0.5
2.0
1.3
14.0
1.0
1.0
0.1
0.45
0.65
1.27 1.27
0.9
0.15
0.4
2.5
0.7
JEITA
:SC-70
JEDEC
:−
Terminal Connector
:Base
:Emitter
:Collector
0∼0.1
JEITA
:−
JEDEC
:−
Terminal Connector
:Emitter
:Collector
:Base
ISAHAYA
 ELECTRONICS CORPORATION
0.4

RT1P144X Related Products

RT1P144X RT1P144M RT1P144C RT1P144U
Description Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
Maker - Isahaya Isahaya Isahaya
package instruction - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code - unknow unknow unknow
Maximum collector current (IC) - 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage - 50 V 50 V 50 V
Configuration - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) - 50 50 50
JESD-30 code - R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components - 1 1 1
Number of terminals - 3 3 3
Maximum operating temperature - 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type - PNP PNP PNP
Maximum power consumption environment - 0.2 W 0.2 W 0.45 W
Maximum power dissipation(Abs) - 0.2 W 0.2 W 0.45 W
surface mount - YES YES YES
Terminal form - GULL WING GULL WING GULL WING
Terminal location - DUAL DUAL DUAL
transistor applications - SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON
Nominal transition frequency (fT) - 150 MHz 150 MHz 150 MHz
VCEsat-Max - 0.3 V 0.3 V 0.3 V
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