RT1P144M datasheet, PDF - EEWORLD Datasheet

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RT1P144M: DescriptionTransistor With Resistor For Switching Application Silicon NPN Epitaxial Type; CategoryDiscrete semiconductor The transistor; File Size49KB，3 Pages; ManufacturerIsahaya; Websitehttp://www.idc-com.co.jp/

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RT1P144M Overview

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

RT1P144M Parametric

Parameter Name	Attribute value
Maker	Isahaya
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power consumption environment	0.2 W
Maximum power dissipation(Abs)	0.2 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.3 V

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Ｒ１１４ SERIES

ＴＰ４Ｘ

〈

Transistor

〉

Transistor With Resistor

For Switching Application

Silicon PNP Epitaxial Type

DESCRIPTION

RT1P144X is a one chip transistor

with built-in bias resistor,NPN type is RT1N144X.

RT1P144U

1.6

OUTLINE DRAWING UNIT

：mm

RT1P144C

2.5

0.4

0.5

1.5

0.5

FEATURE

・

Built-in bias resistor (R1=10kΩ,R2=47kΩ).

0.5

0.4

0.8

0.3

①

②

③

0.95

①

②

③

2.9

1.90

1.6

1.0

APPLICATION

Inverted circuit,switching circuit,interface circuit,

driver circuit.

0.7

0.15

1.1

0.55

0.8

0.16

0∼0.1

(IN)

(OUT)

JEITA

：−

JEDEC

：−

Terminal Connector

①

：Base

②

：Emitter

③

：Collector

RT1P144M

2.1

0.425

1.25

0.425

JEITA

：SC-59

JEDEC

：Similar to TO-236

Terminal Connector

①

：Base

②

：Emitter

③

：Collector

RT1P144S

4.0

(GND)

0.65

0.3

3.0

0∼0.1

Equivalent circuit

0.95

0.5

①

②

③

2.0

1.3

14.0

1.0

0.1

0.45

0.65

1.27 1.27

0.9

0.15

0.4

2.5

①

②

③

0.7

JEITA

：SC-70

JEDEC

：−

Terminal Connector

①

：Base

②

：Emitter

③

：Collector

0∼0.1

JEITA

：−

JEDEC

：−

Terminal Connector

①

：Emitter

②

：Collector

③

：Base

ISAHAYA

ELECTRONICS CORPORATION

0.4

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

Keep safety first in your circuit designs!

ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

ISAHAYA or third party.

ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights ,

originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.

All information contained in these materials, including product data, diagrams and charts, represent information on products

at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

herein.

ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these

materials.

If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to t e export control laws and regulations of Japan and/or the country of destination is

prohibited.

Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jan.2003

RT1P144M Related Products

	RT1P144M	RT1P144X	RT1P144C	RT1P144U
Description	Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type	Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type	Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type	Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
Maker	Isahaya	-	Isahaya	Isahaya
package instruction	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow	-	unknow	unknow
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	-	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	50	-	50	50
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	R-PDSO-G3
Number of components	1	-	1	1
Number of terminals	3	-	3	3
Maximum operating temperature	150 °C	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	-	PNP	PNP
Maximum power consumption environment	0.2 W	-	0.2 W	0.45 W
Maximum power dissipation(Abs)	0.2 W	-	0.2 W	0.45 W
surface mount	YES	-	YES	YES
Terminal form	GULL WING	-	GULL WING	GULL WING
Terminal location	DUAL	-	DUAL	DUAL
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	-	150 MHz	150 MHz
VCEsat-Max	0.3 V	-	0.3 V	0.3 V

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