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RT1P144U

Description
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
CategoryDiscrete semiconductor    The transistor   
File Size49KB,3 Pages
ManufacturerIsahaya
Websitehttp://www.idc-com.co.jp/
Download Datasheet Parametric Compare View All

RT1P144U Overview

Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

RT1P144U Parametric

Parameter NameAttribute value
MakerIsahaya
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment0.45 W
Maximum power dissipation(Abs)0.45 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.3 V
R 1 1 4 SERIES
TP4X
Transistor
Transistor With Resistor
For Switching Application
Silicon PNP Epitaxial Type
DESCRIPTION
RT1P144X is a one chip transistor
with built-in bias resistor,NPN type is RT1N144X.
RT1P144U
1.6
OUTLINE DRAWING       UNIT
   
:mm
RT1P144C
2.5
0.4
0.5
1.5
0.5
FEATURE
Built-in bias resistor (R1=10kΩ,R2=47kΩ).
0.5
0.4
0.8
0.3
0.95
2.9
1.90
1.6
1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.7
0.15
1.1
0.55
0.8
0.16
0∼0.1
R1
B
(IN)
R2
C
(OUT)
         JEITA
    
:−
JEDEC
:−
Terminal Connector
:Base
:Emitter
:Collector
RT1P144M
2.1
0.425
1.25
0.425
JEITA
:SC-59
JEDEC
:Similar to TO-236
Terminal Connector
:Base
:Emitter
:Collector
RT1P144S
4.0
E
(GND)
0.65
0.3
3.0
0∼0.1
Equivalent circuit
0.95
0.5
2.0
1.3
14.0
1.0
1.0
0.1
0.45
0.65
1.27 1.27
0.9
0.15
0.4
2.5
0.7
JEITA
:SC-70
JEDEC
:−
Terminal Connector
:Base
:Emitter
:Collector
0∼0.1
JEITA
:−
JEDEC
:−
Terminal Connector
:Emitter
:Collector
:Base
ISAHAYA
 ELECTRONICS CORPORATION
0.4

RT1P144U Related Products

RT1P144U RT1P144X RT1P144M RT1P144C
Description Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
Maker Isahaya - Isahaya Isahaya
package instruction SMALL OUTLINE, R-PDSO-G3 - SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow - unknow unknow
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V - 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR - SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50 - 50 50
JESD-30 code R-PDSO-G3 - R-PDSO-G3 R-PDSO-G3
Number of components 1 - 1 1
Number of terminals 3 - 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP - PNP PNP
Maximum power consumption environment 0.45 W - 0.2 W 0.2 W
Maximum power dissipation(Abs) 0.45 W - 0.2 W 0.2 W
surface mount YES - YES YES
Terminal form GULL WING - GULL WING GULL WING
Terminal location DUAL - DUAL DUAL
transistor applications SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON - SILICON SILICON
Nominal transition frequency (fT) 150 MHz - 150 MHz 150 MHz
VCEsat-Max 0.3 V - 0.3 V 0.3 V

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Index Files: 75  1217  104  2535  129  2  25  3  52  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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