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STGD8NC60KD

Description
15 A, 600 V, N-CHANNEL IGBT, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size537KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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STGD8NC60KD Overview

15 A, 600 V, N-CHANNEL IGBT, TO-220AB

STGD8NC60KD Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)15 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)62 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)106 ns
Nominal on time (ton)16.5 ns
STGB8NC60KD - STGD8NC60KD
STGF8NC60KD - STGP8NC60KD
600 V - 8 A - short circuit rugged IGBT
Features
Lower on voltage drop (V
CE(sat)
)
Lower C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
Short circuit withstand time 10 µs
1
2
3
2
3
1
DPAK
TO-220
2
Applications
High frequency motor controls
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Figure 1.
1
3
2
3
1
TO-220FP
D
²
PAK
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Internal schematic diagram
Table 1.
Device summary
Marking
GB8NC60KD
GD8NC60KD
GF8NC60KD
GP8NC60KD
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
Order codes
STGB8NC60KDT4
STGD8NC60KDT4
STGF8NC60KD
STGP8NC60KD
April 2008
Rev 2
1/18
www.st.com
18

STGD8NC60KD Related Products

STGD8NC60KD STGB8NC60KD GP8NC60KD GF8NC60KD GD8NC60KD GB8NC60KD
Description 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
Number of components 1 1 1 1 1 1
Number of terminals 2 2 3 3 3 3
Terminal form GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Rated off time - - 242 ns 242 ns 242 ns 242 ns
Maximum collector current - - 15 A 15 A 15 A 15 A
Maximum Collector-Emitter Voltage - - 600 V 600 V 600 V 600 V
Processing package description - - ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN
Lead-free - - Yes Yes Yes Yes
EU RoHS regulations - - Yes Yes Yes Yes
state - - ACTIVE ACTIVE ACTIVE ACTIVE
packaging shape - - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package Size - - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
terminal coating - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Packaging Materials - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Channel type - - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Transistor type - - INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR
Rated on time - - 23 ns 23 ns 23 ns 23 ns
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