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GB8NC60KD

Description
15 A, 600 V, N-CHANNEL IGBT, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size537KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric Compare View All

GB8NC60KD Overview

15 A, 600 V, N-CHANNEL IGBT, TO-220AB

GB8NC60KD Parametric

Parameter NameAttribute value
Number of terminals3
Rated off time242 ns
Maximum collector current15 A
Maximum Collector-Emitter Voltage600 V
Processing package descriptionROHS COMPLIANT, TO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingNOT SPECIFIED
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Number of components1
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Channel typeN-CHANNEL
Transistor typeINSULATED GATE BIPOLAR
Rated on time23 ns
STGB8NC60KD - STGD8NC60KD
STGF8NC60KD - STGP8NC60KD
600 V - 8 A - short circuit rugged IGBT
Features
Lower on voltage drop (V
CE(sat)
)
Lower C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
Short circuit withstand time 10 µs
1
2
3
2
3
1
DPAK
TO-220
2
Applications
High frequency motor controls
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Figure 1.
1
3
2
3
1
TO-220FP
D
²
PAK
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Internal schematic diagram
Table 1.
Device summary
Marking
GB8NC60KD
GD8NC60KD
GF8NC60KD
GP8NC60KD
Package
D²PAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
Order codes
STGB8NC60KDT4
STGD8NC60KDT4
STGF8NC60KD
STGP8NC60KD
April 2008
Rev 2
1/18
www.st.com
18

GB8NC60KD Related Products

GB8NC60KD STGB8NC60KD STGD8NC60KD GP8NC60KD GF8NC60KD GD8NC60KD
Description 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB 15 A, 600 V, N-CHANNEL IGBT, TO-220AB
Number of terminals 3 2 2 3 3 3
Terminal form THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Number of components 1 1 1 1 1 1
transistor applications POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Rated off time 242 ns - - 242 ns 242 ns 242 ns
Maximum collector current 15 A - - 15 A 15 A 15 A
Maximum Collector-Emitter Voltage 600 V - - 600 V 600 V 600 V
Processing package description ROHS COMPLIANT, TO-220, 3 PIN - - ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN
Lead-free Yes - - Yes Yes Yes
EU RoHS regulations Yes - - Yes Yes Yes
state ACTIVE - - ACTIVE ACTIVE ACTIVE
packaging shape RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT - - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
terminal coating NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Packaging Materials PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE - - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Channel type N-CHANNEL - - N-CHANNEL N-CHANNEL N-CHANNEL
Transistor type INSULATED GATE BIPOLAR - - INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR INSULATED GATE BIPOLAR
Rated on time 23 ns - - 23 ns 23 ns 23 ns
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