M74HC190
4 BIT SYNCHRONOUS UP/DOWN COUNTERS
s
s
s
s
s
s
s
HIGH SPEED :
f
MAX
= 44 MHz (TYP.) at V
CC
= 6V
LOW POWER DISSIPATION:
I
CC
=4µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 190
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
M74HC190B1R
M74HC190M1R
DESCRIPTION
The M74HC190 is an high speed CMOS 4-BIT
SYNCHRONOUS
UP/DOWN
COUNTER
2
MOS technology.
fabricated with silicon gate C
State changes of the counter are synchronous
with the LOW-to-HIGH transition of the Clock
Pulse Input.
An asynchronous parallel load input overrides
counting and loads the data present on the DATA
inputs into the flip-flops, which makes it possible to
use the circuits as programmable counters. A
count enable input serves as the carry/borrow
PIN CONNECTION AND IEC LOGIC SYMBOLS
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
input in multi-stage counters. Control input, Down/
Up, determines whether a circuit counts up or
down. A MAX/MIN output and a Ripple Clock
output provide overflow/underflow indication and
make possible a variety of methods for generating
carry/borrow signals in multi-stage counter
applications.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
et
l
o
P
e
od
r
M74HC190RM13TR
M74HC190TTR
s)
t(
uc
T&R
August 2001
1/14
M74HC190
TIMING CHART
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
Parameter
DC Output Voltage
DC Input Diode Current
b
O
I
CC
or I
GND
DC V
CC
or Ground Current
P
D
Power Dissipation
so
T
stg
T
L
te
le
DC Output Diode Current
DC Output Current
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Value
-0.5 to +7
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
±
20
±
20
±
25
±
50
500(*)
-65 to +150
300
Unit
V
V
V
mA
mA
mA
mA
mW
°C
°C
Storage Temperature
Lead Temperature (10 sec)
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°
C; derate to 300mW by 10mW/
°
C from 65
°
C to 85
°
C
4/14