SMP50 / SMTPA / TPA
Trisil™ for telecom equipment protection
Features
■
■
■
■
■
■
Bidirectional crowbar protection
Voltage range from 62 V to 320 V
Low capacitance from 12 pF to 20 pF @ 50 V
Low leakage current : I
R
= 2 µA max
Holding current: I
H
= 150 mA min
Repetitive peak pulse current :
I
PP
= 50 A (10/1000 µs)
SMB
SMA
(JEDEC DO-214AC) (JEDEC DO-214AA)
SMTPA
SMP50
Main applications
Telecommunication equipment such as:
■
■
Analog and digital line cards (xDSL, T1/E1,
ISDN, ...)
Terminals (phone, fax, modem, ...) and central
office equipment
DO-15
TPA
Description
These Trisil series have been designed to protect
telecommunication equipment against lightning
and transient induced by AC power lines.
They are available in SMA, SMB and DO-15
packages.
Order codes
Part Number
SMP50-xxx
TPAxxx
SMTPAxxx
See
Ordering Information
on page 9
Marking
Benefits
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
They are used to help equipment to meet various
standards such as UL1950, IEC950 / CSA C22.2,
UL1459 and FCC part 68.
Trisils have UL94 V0 approved resin.
SMA and SMB packages are JEDEC registered
(DO-214AC and DO-214AA).
Trisils are UL497B approved (file: E136224).
TM: TRISIL is a trademark of STMicroelectronics
Schematic Diagram
June 2007
Rev 3
1/11
www.st.com
11
Characteristics
SMP50 / SMTPA / TPA
1
Characteristics
Table 1.
Compliant with the following standards
Peak Surge
Voltage
(V)
2500
1000
5000
1500
6000
1500
8000
15000
4000
2000
4000
2000
4000
4000
1500
800
1000
Waveform
Voltage
2/10 µs
10/1000 µs
2/10 µs
2/10 µs
10/700 µs
1/60 ns
10/700 µs
1.2/50 µs
10/700 µs
1.2/50 µs
10/160 µs
10/560 µs
9/720 µs
Required
peak current
(A)
500
100
500
100
150
37.5
Current
waveform
2/10 µs
10/1000 µs
2/10 µs
2/10 µs
5/310 µs
Minimum serial
resistor to meet
standard (Ω)
20
10
40
0
53
0
0
0
21.5
0
0
0
21.5
0
12.5
6.5
0
Standard
GR-1089 Core
First level
GR-1089 Core
Second level
GR-1089 Core
Intra-building
ITU-T-K20/K21
ITU-T-K20
(IEC61000-4-2)
VDE0433
VDE0878
IEC61000-4-5
FCC Part 68, lightning
surge type A
FCC Part 68, lightning
surge type B
ESD contact discharge
ESD air discharge
100
50
100
50
100
100
200
100
25
5/310 µs
1/20 µs
5/310 µs
8/20 µs
10/160 µs
10/560 µs
5/320 µs
Table 2.
Symbol
Absolute ratings
(T
amb
= 25° C)
Parameter
10/1000 µs
8/20 µs
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
8/20 µs
t = 0.2 s
t=1s
t=2s
t = 15 mn
t = 16.6 ms
t = 20 ms
Value
50
150
55
65
75
100
100
2.5
16
11.5
10
3.5
6.2
6.5
-55 to 150
150
260
Unit
I
PP
Repetitive peak pulse current (see
Figure 1)
A
I
FS
I
TSM
Fail-safe mode : maximum current
(1)
Non repetitive surge peak on-state current
(sinusoidal)
I
2
t value for fusing
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10 s.
kA
A
I
2
t
T
stg
T
j
T
L
1.
A
2
s
°C
°C
in fail safe mode, the device acts as a short circuit
2/11
SMP50 / SMTPA / TPA
Table 3.
Symbol
Characteristics
Thermal resistances
Value
Parameter
DO-15
SMA
120
30
SMB
100
20
°C/W
°C/W
Unit
R
th(j-a)
R
th(j-l)
Junction to ambient (with recommended footprint
or with L
lead
= 10 mm for DO-15)
Junction to leads (L
lead
= 10 mm for DO-15)
100
60
Table 4.
Symbol
V
RM
V
BR
V
BO
I
RM
I
PP
I
BO
I
H
V
R
I
R
C
Electrical characteristics - definitions
(T
amb
= 25°C)
Parameter
Stand-off voltage
Breakdown voltage
Breakover voltage
Leakage current
Peak pulse current
Breakover current
Holding current
Continuous reverse voltage
Leakage current at V
R
Capacitance
3/11
Characteristics
Table 5.
Electrical characteristics - values (T
amb
= 25°C)
Types
I
RM
@ V
RM
max.
µA
SMP50-62 / TPA62
SMTPA62
SMP50-68 / TPA68
SMTPA68
SMP50-100 / TPA100
SMTPA100
SMP50-120 / TPA120
SMTPA120
SMP50-130 / TPA130
SMTPA130
SMP50-180 / TPA180
SMTPA180
SMP50-200 / TPA200
SMTPA200
SMP50-220 / TPA220
SMTPA220
SMP50-240 / TPA240
SMTPA240
SMP50-270 / TPA270
SMTPA270
SMP50-320 / SMTPA320
2. See functional test circuit 1(Figure
9.)
3. See test circuit 2(Figure
10.)
4. See functional holding current test circuit 3(Figure
11.)
5. V
R
= 50 V bias, V
RMS
= 1 V, F = 1 MHz
6. V
R
= 2 V bias, V
RMS
= 1 V, F = 1 MHz
SMP50 / SMTPA / TPA
I
R
@ V
R(1)
max.
Dynamic
V
BO(2)
max.
Static
V
BO
@ I
BO(3)
max.
V
82
90
133
160
173
240
267
293
320
360
400
800
max.
mA
I
H(4)
min.
mA
C
(5)
typ.
pF
20
20
16
16
14
C
(6)
typ.
pF
40
40
35
30
30
25
25
25
25
25
25
V
56
61
90
108
117
µA
V
62
68
100
120
130
V
85
93
135
160
173
235
262
285
300
350
400
2
162
180
198
216
243
290
5
180
200
220
240
270
320
150
14
12
12
12
12
12
1. I
R
measured at V
R
guarantee V
BR
min
≥
V
R
Figure 1.
Pulse waveform (10/1000 µs)
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
Figure 2.
I
TSM
(A)
30
25
20
15
10
5
Non repetitive surge peak on-state
current versus overload duration
% I
PP
100
F=50Hz
50
0
t
r
t
p
t
t(s)
0
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
4/11
SMP50 / SMTPA / TPA
Characteristics
Figure 3.
On-state voltage versus on-state
current (typical values)
Figure 4.
Relative variation of holding
current versus junction
temperature
I
T
(A)
50
2.0
1.8
I
H
[T
j
] / I
H
[T
j
=25°C]
20
T
j
=25°C
1.6
1.4
10
1.2
1.0
5
0.8
0.6
2
0.4
V
T
(V)
1
0
1
2
3
4
5
6
7
8
9
10
0.2
0.0
-40
-20
0
20
T
j
(°C)
40
60
80
100
120
Figure 5.
Relative variation of breakover
voltage versus junction
temperature
Figure 6.
Relative variation of leakage
current versus reverse voltage
applied (typical values)
V
BO
[T
j
] / V
BO
[T
j
=25°C]
1.10
2000
1000
I
RM
[T
j
] / I
RM
[T
j
=25°C]
V
R
=V
RM
1.05
100
1.00
270 V
10
0.95
62 V
T
j
(°C)
0.90
-40
-20
0
20
40
60
80
100
1
25
50
T
j
(°C)
75
100
125
Figure 7.
Figure 8.
Variation of thermal impedance
junction to ambient versus pulse
duration (Printed circuit board FR4,
S
Cu
= 35 µm, recommended pad
layout)
2.5
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
Z
th(j-a)
(°C/W)
1E+2
C[V
R
] / C[V
R
=50V]
T
j
=25°C
F=1MHz
V
RMS
=1V
2.0
SMTPA / TPA
1E+1
1.5
SMP50
1.0
1E+0
0.5
t
p
(s)
1E-1
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
0.0
1
2
5
10
V
R
(V)
20
50
100
300
5/11
京公网安备 11010802033920号
EEWORLD
