XP161A11A1PR
Power MOSFET
ETR1122_001
■GENERAL
DESCRIPTION
The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
■APPLICATIONS
●Notebook
PCs
●Cellular
and portable phones
●On-board
power supplies
●Li-ion
battery systems
■FEATURES
Low On-State Resistance
: Rds(on)=0.065Ω@ Vgs=10V
: Rds(on)=0.105Ω@ Vgs=4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: 4.5V
N-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-89
■PIN
CONFIGURATION
■PIN
ASSIGNMENT
PIN NUMBER
1
2
3
PIN NAME
G
D
S
FUNCTION
Gate
Drain
Source
■EQUIVALENT
CIRCUIT
■ABSOLUTE
MAXIMUM RATINGS
Ta = 25℃
PARAMETER
Drain - Source Voltage
Gate - Source Voltage
Drain Current
Drain Current
(DC)
(Pulse)
SYMBOL RATINGS UNITS
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
30
±20
4
16
4
2
150
-55~150
V
V
A
A
A
W
℃
℃
Reverse Drain Current
Channel Power Dissipation *
Channel Temperature
Storage Temperature Range
* When implemented on a ceramic PCB
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XP161A11A1PR
■ELECTRICAL
CHARACTERISTICS
DC Characteristics
PARAMETER
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Drain-Source On-State Resistance*1
Forward Transfer Admittance *1
Body Drain Diode
Forward Voltage
SYMBOL
Idss
Igss
Vgs(off)
Rds(on)
| Yfs |
Vf
CONDITIONS
Vds=30V, Vgs= 0V
Vgs=
±20V,
Vds= 0V
Id= 1mA, Vds= 10V
Id= 2A, Vgs= 10V
Id= 2A, Vgs= 4.5V
Id= 2A, Vds= 10V
If= 4A, Vgs= 0V
MIN.
-
-
1.0
-
-
-
-
TYP.
-
-
-
0.05
0.075
5.5
0.85
MAX.
10
±10
2.5
0.065
0.105
-
1.1
Ta = 25℃
UNITS
μA
μA
V
Ω
Ω
S
V
*1 Effective during pulse test.
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
Vds= 10V, Vgs=0V
f= 1MHz
CONDITIONS
MIN.
-
-
-
TYP.
270
150
55
MAX.
-
-
-
Ta = 25℃
UNITS
pF
pF
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
Vgs= 5V, Id=2A
Vdd= 10V
CONDITIONS
MIN.
-
-
-
-
TYP.
10
15
35
15
MAX.
-
-
-
-
Ta = 25℃
UNITS
ns
ns
ns
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
Rth (ch-a)
CONDITIONS
Implement on a ceramic PCB
MIN.
-
TYP.
62.5
MAX.
-
UNITS
℃/W
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XP161A11A1PR
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this catalog is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this catalog.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this catalog.
4. The products in this catalog are not developed, designed, or approved for use with such
equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this catalog within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this catalog may be copied or reproduced without the
prior permission of Torex Semiconductor Ltd.
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