FDS8896 N-Channel PowerTrench
®
MOSFET
April 2007
FDS8896
N-Channel PowerTrench
®
MOSFET
30V, 15A, 6.0mΩ
Features
r
DS(on)
= 6.0mΩ, V
GS
= 10V, I
D
= 15A
r
DS(on)
= 7.3mΩ, V
GS
= 4.5V, I
D
= 14A
High performance trench technology for extremely low
r
DS(on)
Low gate charge
High power and current handling capability
RoHS Compliant
tm
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
DS(on)
and fast switching speed.
Applications
DC/DC converters
Branding Dash
5
5
4
3
2
1
6
7
1
2
3
4
8
SO-8
©2007 Fairchild Semiconductor Corporation
FDS8896 Rev. B
1
www.fairchildsemi.com
FDS8896 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GS
I
D
E
AS
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
A
= 25
o
C, V
GS
= 10V, R
θJA
= 50
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 C
Operating and Storage Temperature
o
Parameter
Ratings
30
±20
15
14
110
196
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/
o
C
o
Continuous (T
A
= 25
o
C, V
GS
= 4.5V, R
θJA
= 50
o
C/W)
C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2b)
25
50
125
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking
FDS8896
Device
FDS8896
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
Electrical Characteristics
T
J
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= 250µA, V
GS
= 0V
V
DS
= 24V
V
GS
= 0V
V
GS
= ±20V
T
J
=
150
o
C
30
-
-
-
-
-
-
-
-
1
250
±100
V
µA
nA
On Characteristics
V
GS(TH)
r
DS(on)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
I
D
= 15A, V
GS
= 10V
Drain to Source On Resistance
I
D
= 14A, V
GS
= 4.5V
I
D
= 15A, V
GS
= 10V,
T
J
= 150
o
C
1.2
-
-
-
-
4.9
5.8
7.8
2.5
6.0
7.3
10.1
mΩ
V
Dynamic Characteristics
C
ISS
C
OSS
C
RSS
R
G
Q
g(TOT)
Q
g(5)
Q
g(TH)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
GS
= 0.5V, f = 1MHz
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 15A
I
g
= 1.0mA
-
-
-
0.6
-
-
-
-
-
-
2525
490
300
2.4
50
28
2.5
7.0
4.5
11
-
-
-
4.2
67
36
3.2
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
nC
nC
©2007 Fairchild Semiconductor Corporation
FDS8896 Rev. B
2
www.fairchildsemi.com
FDS8896 N-Channel PowerTrench
®
MOSFET
Switching Characteristics
(V
GS
= 10V)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
V
DD
= 15V, I
D
= 14A
V
GS
= 10V, R
GS
= 6.2Ω
-
-
-
-
-
-
-
8
37
60
24
-
68
-
-
-
-
126
ns
ns
ns
ns
ns
ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
RR
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
I
SD
= 15A
I
SD
= 2.1A
I
SD
= 15A, dI
SD
/dt = 100A/µs
I
SD
= 15A, dI
SD
/dt = 100A/µs
-
-
-
-
-
-
-
-
1.25
1.0
29
15
V
V
ns
nC
Notes:
1:
Starting T
J
= 25°C, L = 1mH, I
AS
= 19.8A, V
DD
= 30V, V
GS
= 10V.
2:
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user’s board design.
a) 50°C/W when mounted on a 1in
2
pad of 2 oz copper.
b) 125°C/W when mounted on a minimum pad.
©2007 Fairchild Semiconductor Corporation
FDS8896 Rev. B
3
www.fairchildsemi.com
FDS8896 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
1.2
1.0
0.8
I
D
, DRAIN CURRENT (A)
15
V
GS
= 10V
20
POWER DISSIPATION MULTIPLIER
V
GS
= 4.5V
10
0.6
0.4
5
R
θJA
=50
o
C/W
0
0.2
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
o
C)
25
50
75
100
125
T
A
, AMBIENT TEMPERATURE (
o
C)
150
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
R
θ
JA
= 125 C/W
o
0.001
0.0005
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
P
(PK)
, PEAK TRANSIENT POWER (W)
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 125 C/W
o
100
T
A
= 25 C
o
10
1
0.5
-4
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t, PULSE WIDTH (s)
Figure 4. Single Pulse Maximum Power Dissipation
©2007 Fairchild Semiconductor Corporation
FDS8896 Rev. B
4
www.fairchildsemi.com
FDS8896 N-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25°C unless otherwise noted
100
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
50
40
I
D
, DRAIN CURRENT (A)
PULSE DURATION = 80
µ
s
DUTY CYCLE = 0.5%MAX
I
AS
, AVALANCHE CURRENT (A)
V
DS
= 5V
10
STARTING T
J
= 25
o
C
30
20
10
0
1.5
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
STARTING T
J
= 150
o
C
1
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
2.0
2.5
3.0
3.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Unclamped Inductive Switching
Capability
50
V
GS
= 10V
40
V
GS
= 5V
Figure 6. Transfer Characteristics
14
I
D
= 15A
r
DS(on)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
12
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 4V
I
D
, DRAIN CURRENT (A)
30
V
GS
= 3V
20
T
A
= 25
o
C
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
8
10
V
GS
= 2.5V
0
0
0.1
0.2
6
0.3
0.4
0.5
4
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
1.2
1.6
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
NORMALIZED GATE
THRESHOLD VOLTAGE
V
GS
= V
DS
, I
D
= 250µA
1.4
1.0
1.2
1.0
0.8
0.8
V
GS
= 10V, I
D
= 15A
0.6
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
0.6
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
©2007 Fairchild Semiconductor Corporation
FDS8896 Rev. B
5
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
www.fairchildsemi.com
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