MRF6V2300NR1_08 datasheet, PDF

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MRF6V2300NR1_08: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272; Categorysemiconductor Discrete semiconductor; File Size638KB，16 Pages; ManufacturerFREESCALE (NXP)

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MRF6V2300NR1_08 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272

MRF6V2300NR1_08 Parametric

Parameter Name	Attribute value
Number of terminals	4
Minimum breakdown voltage	110 V
Processing package description	ROHS COMPLIANT, PLASTIC, CASE 1484-04, WB, 4 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
surface mount	Yes
Terminal form	FLAT
terminal coating	tin
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	source
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Channel type	N channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	RF power
highest frequency band	ULTRA high frequency band

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Freescale Semiconductor

Technical Data

Document Number: MRF6V2300N

Rev. 3, 1/2008

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed primarily for CW large - signal output and driver applications with

frequencies up to 600 MHz. Devices are unmatched and are suitable for use in

industrial, medical and scientific applications.

•

Typical CW Performance: V

= 50 Volts, I

= 900 mA,

out

= 300 Watts, f = 220 MHz

Power Gain — 25.5 dB

Drain Efficiency — 68%

•

Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW

Output Power

Features

•

Integrated ESD Protection

•

Excellent Thermal Stability

•

Facilitates Manual Gain Control, ALC and Modulation Techniques

•

200°C Capable Plastic Package

•

RoHS Compliant

•

In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

MRF6V2300NR1

MRF6V2300NBR1

10 - 600 MHz, 300 W, 50 V

LATERAL N - CHANNEL

SINGLE - ENDED

BROADBAND

RF POWER MOSFETs

CASE 1486 - 03, STYLE 1

TO - 270 WB - 4

PLASTIC

MRF6V2300NR1

CASE 1484 - 04, STYLE 1

TO - 272 WB - 4

PLASTIC

MRF6V2300NBR1

PARTS ARE SINGLE - ENDED

out

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

Table 1. Maximum Ratings

Rating

Drain- Source Voltage

Gate- Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Symbol

DSS

stg

Value

- 0.5, +110

- 0.5, +10

- 65 to +150

150

200

Unit

Vdc

°C

MRF6V2300NR1 MRF6V2300NBR1

RF Device Data

Freescale Semiconductor

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