TISP4180
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK
APRIL 1987 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘4180
V
(Z)
V
145
V
(BO)
V
180
DO-220 PACKAGE
(TOP VIEW)
A(T)
1
B(R)
2
q
Planar Passivated Junctions
Low Off-State Current < 10 µA
Rated for International Surge Wave Shapes
WAVE SHAPE
8/20 µs
10/160 µs
10/560 µs
0.2/310 µs
10/700 µs
10/1000 µs
STANDARD
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
I
TSP
A
150
60
45
38
50
50
50
50
Pin 1 is in electrical contact with the mounting base.
MD4XAB
q
device symbol
q
UL Recognized, E132482
description
The TISP4180 is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of a bidirectional
suppressor element connecting the A and B
terminals. They will suppress inter-wire voltage
transients.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP4180
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
absolute maximum ratings at
25°C case temperature (unless otherwise noted)
RATING
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current, 50 Hz, 2.5 s (see Notes 1 and 2)
Initial rate of rise of on-state current,
Junction temperature
Operating free - air temperature range
Storage temperature range
Lead temperature 1.5 mm from case for 10 s
T
stg
T
lead
Linear current ramp, Maximum ramp value < 38 A
I
TSM
di
T
/dt
T
J
I
TSP
150
60
50
38
50
50
45
50
10
250
150
0 to 70
-40 to +150
260
A rms
A/µs
°C
°C
°C
°C
A
SYMBOL
VALUE
UNIT
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics, T
J
= 25°C
PARAMETER
V
Z
∝
V
Z
Reference zener
voltage
Temperature coefficient
of reference voltage
Breakover voltage
Breakover current
Peak on-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state leakage
current
Off-state capacitance
(see Notes 4 and 5)
(see Note 4)
I
T
=
±
5 A
(see Note 4)
(see Note 6)
V
D
=
±
50 V
V
D
= 0
f = 1 kHz
110
(see Notes 4 and 5)
±
150
±
5
±
10
200
±
0.15
±
2.2
I
Z
=
±
1mA
TEST CONDITIONS
MIN
±
145
0.1
±
180
±
0.6
±
3
TYP
MAX
UNIT
V
%/
o
C
V
A
V
mA
kV/µs
µA
pF
V
(BO)
I
(BO)
V
TM
I
H
dv/dt
I
D
C
off
NOTES: 4. These parameters must be measured using pulse techniques, t
w
= 100
µs,
duty cycle
≤
2%.
5. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
6. Linear rate of rise, maximum voltage limited to 80 % V
Z
(minimum).
.
thermal characteristics
PARAMETER
R
θ
JA
Junction to free air thermal resistance
MIN
TYP
MAX
62.5
UNIT
°C/W
PRODUCT
INFORMATION
2
TISP4180
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS A and B
PRODUCT
INFORMATION
3
TISP4180
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
A and B terminals
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
V
Z
, V
(BO)
- Zener Voltage, Breakover Voltage - V
1000
TCS4MAA
ZENER VOLTAGE & BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
180
175
170
V
Z
165
160
155
150
145
140
-25
TCS4MAB
V
(BO)
I
T
- On-State Current - A
100
10
1
1
10
V
T
- On-State Voltage - V
100
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
Figure 2.
Figure 3.
PRODUCT
INFORMATION
4
TISP4180
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
A and B terminals
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
I
H
, I
(BO)
- Holding Current, Breakover Current - A
1
TCS4MAC
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
10
TCS4MAD
I
(BO)
I
D
- Off-State Current - µA
1
VD = ±50 V
I
H
0·1
0·1
0·01
0·01
-25
0
25
50
75
100
125
150
0·001
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature - °C
T
J
- Junction Temperature - °C
Figure 4.
Figure 5.
ON-STATE VOLTAGE
vs
JUNCTION TEMPERATURE
3
TCS4MAE
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
1.4
TCS4MAF
V
T
- On State Voltage - V
I
T
= ±5A
2
Normalised Breakover Voltage
150
3
1.3
2
1.2
1
1.1
0
0
-25
0
25
50
75
100
125
1.0
0·001
0·01
0·1
1
10
100
T
J
- Junction Temperature - °C
di/dt - Rate of Rise of Principle Current - A/µs
Figure 6.
Figure 7.
PRODUCT
INFORMATION
5
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