2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1015-1000
(Previous: ADE-208-357H)
Rev.10.00
Sep 07, 2005
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
R
DS(on)
= 7 mΩ typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
G
1
2
D
1. Gate
2. Drain
3. Source
4. Drain
3
S
1
2
3
Rev.10.00 Sep 07, 2005 page 1 of 8
2SK2553(L), 2SK2553(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Ω
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
Note 1
I
DR
I
AP
Note 3
E
AR
Note 3
Pch
Note 2
Tch
Tstg
Ratings
60
±20
50
200
50
45
174
75
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note:
4. Pulse Test
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
±20
—
—
1.0
—
—
35
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
7
10
55
3550
1760
500
35
230
470
360
0.85
135
Max
—
—
±10
10
2.0
10
16
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±16
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A, V
GS
= 10 V
Note 4
I
D
= 25 A, V
GS
= 4 V
Note 4
I
D
= 25 A, V
DS
= 10 V
Note 4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
I
D
= 25 A, V
GS
= 10 V,
R
L
= 1.2
Ω
I
F
= 50 A, V
GS
= 0
I
F
= 50 A, V
GS
= 0
di
F
/ dt = 50 A /
µs
Rev.10.00 Sep 07, 2005 page 2 of 8
2SK2553(L), 2SK2553(S)
Main Characteristics
Power vs. Temperature Derating
100
Maximum Safe Operation Area
500
200
10
PW
D
C
O
Channel Dissipation Pch (W)
Drain Current I
D
(A)
75
100
50
20
10
5
2
Ta = 25°C
0.5
0.1 0.3
1
1
Operation in
this area is
limited by R
DS(on)
10
=
0
µs
1
10
io
µs
m
m
s
sh
ot
)
)
50
s
pe
t
ra
(1
n
c
(T
=
25
°
C
25
0
50
100
150
200
3
10
30
100
Case Temperature T
C
(°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V 6 V
5V
Pulse Test
100
Typical Transfer Characteristics
Drain Current I
D
(A)
60
3V
Drain Current I
D
(A)
80
4V
3.5 V
80
V
DS
= 10 V
Pulse Test
60
40
40
25°C
Tc = 75°C
20
–25°C
1
2
3
4
5
20
V
GS
= 2.5 V
0
2
4
6
8
10
0
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1.0
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
1
3
10
30
100
300
1000
V
GS
= 4 V
10 V
Pulse Test
Drain to Source Saturation Voltage V
DS (on)
(V)
0.8
0.6
0.4
I
D
= 50 A
0.2
20 A
10 A
2
4
6
8
10
0
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
0.0005
Drain Current I
D
(A)
Rev.10.00 Sep 07, 2005 page 3 of 8
2SK2553(L), 2SK2553(S)
Static Drain to Source on State
Resistance vs. Temperature
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
y
fs
(S)
0.04
Pulse Test
0.032
500
200
100
50
20
10
5
2
1
0.5
0.1
0.3
1
3
10
30
100
75°C
25°C
Tc = –25°C
V
DS
= 10 V
Pulse Test
0.024
I
D
= 50 A
10, 20 A
V
GS
= 4 V
10, 20, 50 A
10 V
0.016
0.008
0
–40
0
40
80
120
160
Case Temperature T
C
(°C)
Body to Drain Diode Reverse
Recovery Time
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
Reverse Recovery Time t rr (ns)
5000
2000
Capacitance C (pF)
1000
500
200
100
50
20
10
5
0.1
0.3
1
di / dt = 50 A /
µs
V
GS
= 0, Ta = 25°C
3
10
30
100
Ciss
2000
1000
500
Coss
Crss
200
100
V
GS
= 0
f = 1 MHz
0
10
20
30
40
50
Reverse Drain Current I
DR
(A)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Switching Characteristics
Drain to Source Voltage V
DS
(V)
I
D
= 50 A
Gate to Source Voltage V
GS
(V)
100
20
5000
2000
80
V
DD
= 10 V
25 V
50 V
V
GS
16
Switching Time t (ns)
1000
500
200
100
50
20
10
5
0.1
0.3
td(off)
tf
tr
td(on)
60
V
DS
12
40
8
20
V
DD
= 50 V
25 V
10 V
40
80
120
160
4
0
200
V
GS
= 10 V, V
DD
= 30 V
PW = 5
µs,
duty < 1 %
0
1
3
10
30
100
Gate Charge Qg (nc)
Drain Current I
D
(A)
Rev.10.00 Sep 07, 2005 page 4 of 8
2SK2553(L), 2SK2553(S)
Reverse Drain Current vs.
Source to Drain Voltage
100
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
200
I
AP
= 45 A
V
DD
= 25 V
duty < 0.1 %
Rg > 50
Ω
Reverse Drain Current I
DR
(A)
Pulse Test
80
10 V
5V
V
GS
= 0, –5 V
160
60
120
40
80
20
40
0
25
0
0.4
0.8
1.2
1.6
2.0
50
75
100
125
150
Source to Drain Voltage
V
SD
(V)
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.67°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.03
0.02
1
lse
0.0
t pu
ho
1s
100
µ
0.01
10
µ
Pulse Width
Avalanche Test Circuit
V
DS
Monitor
L
PW (S)
Avalanche Waveform
V
DSS
1
• L • I
AP2
•
V
DSS
– V
DD
2
V
(BR)DSS
E
AR
=
I
AP
Monitor
Rg
Vin
15 V
D. U. T
V
DD
I
AP
V
DS
I
D
50
Ω
V
DD
0
Rev.10.00 Sep 07, 2005 page 5 of 8
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