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2SK2553

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size88KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK2553 Overview

Silicon N Channel MOS FET High Speed Power Switching

2SK2553 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)50 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountNO
Base Number Matches1
2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1015-1000
(Previous: ADE-208-357H)
Rev.10.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
R
DS(on)
= 7 mΩ typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
G
1
2
D
1. Gate
2. Drain
3. Source
4. Drain
3
S
1
2
3
Rev.10.00 Sep 07, 2005 page 1 of 8

2SK2553 Related Products

2SK2553 2SK2553L-E 2SK2553STL-E
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
package instruction , LDPAK-3 SC-83, LDPAK-3
Reach Compliance Code compli compli compli
Configuration Single SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 50 A 50 A 50 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W 75 W 75 W
surface mount NO NO YES
Base Number Matches 1 1 1
Brand Name - Renesas Renesas
Is it Rohs certified? - conform to conform to
Parts packaging code - LDPAK(L) LDPAK(S)-(1)
Contacts - 4 4
Manufacturer packaging code - PRSS0004AE-A4 PRSS0004AE-B4
ECCN code - EAR99 EAR99
Shell connection - DRAIN DRAIN
Minimum drain-source breakdown voltage - 60 V 60 V
Maximum drain current (ID) - 50 A 50 A
Maximum drain-source on-resistance - 0.016 Ω 0.016 Ω
JESD-30 code - R-PSIP-T3 R-PSSO-G2
JESD-609 code - e6 e6
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 3 2
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED 245
Maximum pulsed drain current (IDM) - 200 A 200 A
Certification status - Not Qualified Not Qualified
Terminal surface - TIN BISMUTH TIN BISMUTH
Terminal form - THROUGH-HOLE GULL WING
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED 20
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON

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