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2SK2553STL-E

Description
Silicon N Channel MOS FET High Speed Power Switching
CategoryDiscrete semiconductor    The transistor   
File Size88KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SK2553STL-E Overview

Silicon N Channel MOS FET High Speed Power Switching

2SK2553STL-E Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
Parts packaging codeLDPAK(S)-(1)
package instructionSC-83, LDPAK-3
Contacts4
Manufacturer packaging codePRSS0004AE-B4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.016 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
Maximum pulsed drain current (IDM)200 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature20
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2SK2553(L), 2SK2553(S)
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1015-1000
(Previous: ADE-208-357H)
Rev.10.00
Sep 07, 2005
Application
High speed power switching
Features
Low on-resistance
R
DS(on)
= 7 mΩ typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
G
1
2
D
1. Gate
2. Drain
3. Source
4. Drain
3
S
1
2
3
Rev.10.00 Sep 07, 2005 page 1 of 8

2SK2553STL-E Related Products

2SK2553STL-E 2SK2553L-E 2SK2553
Description Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching Silicon N Channel MOS FET High Speed Power Switching
package instruction SC-83, LDPAK-3 LDPAK-3 ,
Reach Compliance Code compli compli compli
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single
Maximum drain current (Abs) (ID) 50 A 50 A 50 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W 75 W 75 W
surface mount YES NO NO
Base Number Matches 1 1 1
Brand Name Renesas Renesas -
Is it Rohs certified? conform to conform to -
Parts packaging code LDPAK(S)-(1) LDPAK(L) -
Contacts 4 4 -
Manufacturer packaging code PRSS0004AE-B4 PRSS0004AE-A4 -
ECCN code EAR99 EAR99 -
Shell connection DRAIN DRAIN -
Minimum drain-source breakdown voltage 60 V 60 V -
Maximum drain current (ID) 50 A 50 A -
Maximum drain-source on-resistance 0.016 Ω 0.016 Ω -
JESD-30 code R-PSSO-G2 R-PSIP-T3 -
JESD-609 code e6 e6 -
Humidity sensitivity level 1 1 -
Number of components 1 1 -
Number of terminals 2 3 -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form SMALL OUTLINE IN-LINE -
Peak Reflow Temperature (Celsius) 245 NOT SPECIFIED -
Maximum pulsed drain current (IDM) 200 A 200 A -
Certification status Not Qualified Not Qualified -
Terminal surface TIN BISMUTH TIN BISMUTH -
Terminal form GULL WING THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature 20 NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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