2SK2570
Silicon N Channel MOS FET
Low Frequency Power Switching
REJ03G1019-0200
(Previous: ADE-208-574)
Rev.2.00
Sep 07, 2005
Features
•
Low on-resistance
R
DS(on)
= 0.8
Ω
typ. (V
GS
= 4 V, I
D
= 100 mA)
•
2.5 V gate drive devices.
•
Small package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
D
3
1
2
G
1. Source
2. Gate
3. Drain
S
Note:
Marking is “ZL–”
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2570
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Note: 1. PW
≤
10
µs,
duty cycle
≤
1 %
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
Pch
Tch
Tstg
Ratings
20
±10
0.2
0.4
150
150
–55 to +150
Unit
V
V
A
A
mW
°
C
°
C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Notes: 2. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Min
20
±10
—
—
0.5
—
—
0.22
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.8
1.3
0.35
45
33
9.6
20
60
240
140
Max
—
—
1.0
±5.0
1.5
1.1
2.2
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Test Conditions
I
D
= 10
µA,
V
GS
= 0
I
G
= ±100
µA,
V
DS
= 0
V
DS
= 20 V, V
GS
= 0
V
GS
=
±6.5
V, V
DS
= 0
I
D
= 10
µA,
V
DS
= 5 V
I
D
= 100 mA, V
GS
= 4 V *
2
I
D
= 40 mA, V
GS
= 2.5 V *
2
I
D
= 100 mA, V
DS
= 10 V *
2
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
GS
= 5 V, I
D
= 100 mA,
R
L
= 100
Ω
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2570
Main Characteristics
Maximum Channel Dissipation Curve
Pch (mW)
200
5
2
Maximum Safe Operation Area
Drain Current I
D
(A)
50
100
150
200
150
1
1 ms
PW
10 =
0.2
(1
DC
sh ms
ot
0.1
O
)
pe
Operation in
ra
tio
0.05 this area is
n
limited by R
DS(on)
0.02
Ta = 25°C
0.01
1 shot
0.05
0.2 0.5 1 2
5 10 20
0.5
Channel Dissipation
100
50
0
50 100
Ambient Temperature
Ta (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
0.20
10 V
5V
2.5 V
2V
0.20
Typical Transfer Characteristics
Drain Current I
D
(A)
Drain Current I
D
(A)
0.16
0.16
75°C
0.12
25°C
Tc = –25°C
0.12
1.8 V
0.08
V
GS
= 1.6 V
0.08
0.04
0.04
V
DS
= 10 V
Pulse Test
Pulse Test
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
Drain to Source Saturation Voltage V
DS (on)
(V)
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
0.5
Pulse Test
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
V
GS
= 2.5 V
0.4
0.3
1
4V
0.5
0.2
I
D
= 0.2 A
0.1
0.1 A
0.05 A
2
4
6
8
10
0.2
0.1
0.01
0
0.02
0.05
0.1
0.2
0.5
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2570
Static Drain to Source on State
Resistance vs. Temperature
2.5
I
D
= 0.2 A
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
y
fs
(S)
1
0.5
0.2
0.1
0.05
2.0
Tc = –25°C
1.5
V
GS
= 2.5 V
0.05, 0.1A
25°C
75°C
1.0
0.05, 0.1, 0.2 A
0.5
0
Ð40
4V
Pulse Test
0
40
80
120
160
0.02
0.01
0.005
V
DS
= 10 V
Pulse Test
0.002
0.005 0.01 0.02
0.05
0.1
0.2
Case Temperature T
C
(°C)
Drain Current I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
500
200
500
Switching Characteristics
td(off)
Switching Time t (µs)
Capacitance C (pF)
200
100
50
20
10
5
0.05
100
50
20
10
5
2
1
0
V
GS
= 0
f = 1 MHz
tf
tr
Ciss
Coss
td(on)
Crss
V
GS
= 5 V,
V
DD
= 10 V
PW = 5
µs,
duty < 1 %
4
8
12
16
20
0.1
0.2
0.5
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
0.20
Drain Current
I
D
(A)
Reverse Drain Current I
DR
(A)
0.16
0.12
5V
V
GS
= 0
0.08
0.04
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage
V
SD
(V)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2570
Switching Time Test Circuit
Waveform
90%
Vin Monitor
D.U.T.
R
L
Vout
Vin
5V
50
Ω
V
DD
= 10 V
td(on)
10%
10%
Vout
Monitor
Vin
10%
90%
90%
td(off)
tf
tr
Rev.2.00 Sep 07, 2005 page 5 of 6
京公网安备 11010802033920号
EEWORLD
