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2SC4537IS-TL-E

Description
Silicon NPN Epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size152KB,6 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SC4537IS-TL-E Overview

Silicon NPN Epitaxial

2SC4537IS-TL-E Parametric

Parameter NameAttribute value
package instructionCMPAK-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.5 pF
Collector-emitter maximum voltage11 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)6000 MHz
Base Number Matches1
2SC4537
Silicon NPN Epitaxial
REJ03G0727-0300
(Previous ADE-208-1110A)
Rev.3.00
Aug.10.2005
Application
UHF / VHF wide band amplifier
Outline
RENESAS Package code: PTSP0003ZA-A
(Package name: CMPAK
R
)
3
1. Emitter
2. Base
3. Collector
1
2
Note:
Marking is “IS–”.
*CMPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Ratings
15
11
2
50
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Rev.3.00 Aug 10, 2005 page 1 of 5

2SC4537IS-TL-E Related Products

2SC4537IS-TL-E 2SC4537
Description Silicon NPN Epitaxial Silicon NPN Epitaxial
package instruction CMPAK-3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A
Collector-based maximum capacity 1.5 pF 1.5 pF
Collector-emitter maximum voltage 11 V 11 V
Configuration SINGLE SINGLE
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 6000 MHz 6000 MHz
Base Number Matches 1 1
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