3SK318
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
REJ03G0819-0200
(Previous ADE-208-600)
Rev.2.00
Aug.10.2005
Features
•
Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
•
Excellent cross modulation characteristics
•
Capable low voltage operation; +B= 5V
Outline
RENESAS Package code: PTSP0004ZA-A
(Package name: CMPAK-4)
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Note:
Marking is “YB–“.
Rev.2.00 Aug 10, 2005 page 1 of 7
3SK318
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
G1S
V
G2S
I
D
Pch
Tch
Tstg
Ratings
6
±6
±6
20
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate1 to source breakdown voltage
Gate2 to source breakdown
voltage
Gate1 to source cutoff current
Gate2 to source cutoff current
Gate1 to source cutoff voltage
Gate2 to source cutoff voltage
Drain current
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
V
(BR)DSS
V
(BR)G1SS
V
(BR)G2SS
I
G1SS
I
G2SS
V
G1S(off)
V
G2S(off)
I
DS(op)
|y
fs
|
C
iss
C
oss
C
rss
PG
NF
Min
6
±6
±6
—
—
0.5
0.5
0.5
18
1.3
0.9
—
18
—
Typ
—
—
—
—
—
0.7
0.7
4
24
1.6
1.2
0.019
21
1.4
Max
—
—
—
±100
±100
1.0
1.0
10
32
1.9
1.5
0.03
—
2.2
Unit
V
V
V
nA
nA
V
V
mA
mS
pF
pF
pF
dB
dB
Test conditions
I
D
= 200
µA,
V
G1S
= V
G2S
= 0
I
G1
= ±10
µA,
V
G2S
= V
DS
= 0
I
G2
= ±10
µA,
V
G1S
= V
DS
= 0
V
G1S
= ±5 V, V
G2S
= V
DS
= 0
V
G2S
= ±5 V, V
G1S
= V
DS
= 0
V
DS
= 5 V, V
G2S
= 3 V
I
D
= 100µA
V
DS
= 5 V, V
G1S
= 3 V
I
D
= 100
µA
V
DS
= 3.5 V, V
G1S
= 1.1 V
V
G2S
= 3 V
V
DS
= 3.5 V, V
G2S
= 3 V
I
D
= 10 mA , f = 1 kHz
V
DS
= 3.5 V, V
G2S
= 3 V
I
D
= 10 mA , f= 1 MHz
V
DS
= 3.5 V, V
G2S
= 3 V
I
D
= 10 mA , f = 900 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
3SK318
Maximum Channel Power
Dissipation Curve
Channel Power Dissipation Pch (mW)
200
20
V
G1S
= 1.7 V
Typical Output Characteristics
V
G2S
= 3 V
16
150
1.6 V
1.5 V
Drain Current I
D
(mA)
12
1.4 V
1.3 V
1.2 V
100
8
50
4
1.1 V
1.0 V
0.9 V
0.8 V
0
50
100
150
200
0
2
4
6
8
10
Ambient Temperature Ta (°C)
Drain to Source Voltage V
DS
(V)
Drain Current vs.
Gate2 to Source Voltage
20
V
DS
= 3.5 V
2.0 V
1.6 V
1.8 V
Drain Current vs.
Gate1 to Source Voltage
20
V
DS
= 3.5 V
2.5 V
Drain Current I
D
(mA)
12
1.5 V
Drain Current I
D
(mA)
16
2.0 V
16
12
1.4 V
8
8
1.2 V
V
G1S
= 1.0 V
4
V
G2S
= 1.0 V
0
1
2
3
4
5
4
0
1
2
3
4
5
Gate1 to Source Voltage V
G1S
(V)
Gate2 to Source Voltage V
G2S
(V)
Forward Transfer Admittance
vs. Gate1 Voltage
Forward Transfer Admittance |y
fS
| (mS)
30
V
DS
= 3.5 V
V
G2S
= 3 V
25
Power Gain vs. Drain Current
18
2.5 V
Power Gain PG (dB)
24
20
15
12
2V
1.5 V
1V
10
V
DS
= 3.5 V
V
G2S
= 3 V
f = 900 MHz
5
10
15
20
25
6
5
0
0.4
0.8
1.2
1.6
2.0
0
Gate1 to Source Voltage V
G1S
(V)
Drain Current I
D
(mA)
Rev.2.00 Aug 10, 2005 page 3 of 7
3SK318
Noise Figure vs. Drain Current
5
V
DS
= 3.5 V
V
G2S
= 3 V
f = 900 MHz
Power Gain vs. Drain to Source Voltage
25
Noise Figure NF (dB)
Power Gain PG (dB)
4
20
3
15
2
10
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
2
4
6
8
10
1
5
0
5
10
15
20
25
0
Drain Current I
D
(mA)
Drain to Source Voltage V
DS
(V)
Noise Figure vs. Drain to Source Voltage
5
V
G2S
= 3 V
I
D
= 10 mA
f = 900 MHz
Power Gain vs. Gate2 to Source Voltage
25
V
DS
= 3.5 V
f = 900MHz
Noise Figure NF (dB)
4
20
Power Gain PG (dB)
3
15
2
10
1
5
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Gate2 to Source Voltage V
G2S
(V)
Noise Figure vs. Gate2 to Source Voltage
5
V
DS
= 3.5 V
f = 900MHz
Noise Figure NF (dB)
4
3
2
1
0
1
2
3
4
5
Gate2 to Source Voltage V
G2S
(V)
Rev.2.00 Aug 10, 2005 page 4 of 7
3SK318
S11 Parameter vs. Frequency
.8
.6
.4
3
.2
4
5
10
0
.2
.4
.6 .8 1
1.5 2
3 45
10
–10
–.2
–5
–4
–3
–.4
–.6
–.8
–1.5
–2
–120°
–90°
–60°
–1
180°
0°
150°
30°
1
1.5
2
120°
S21 Parameter vs. Frequency
90°
Scale: 1 / div.
60°
–150°
–30°
Test Condition : V
DS
= 3.5 V , V
G2S
= 3 V
I
D
= 10mA
50 to 1000 MHz (50 MHz step)
Test Condition : V
DS
= 3.5 V , V
G2S
= 3 V
I
D
= 10mA
50 to 1000 MHz (50 MHz step)
S12 Parameter vs. Frequency
90°
120°
S22 Parameter vs. Frequency
.8
.6
.4
3
1
1.5
2
Scale: 0.002 / div.
60°
150°
30°
.2
4
5
10
180°
0°
0
.2
.4
.6 .8 1
1.5 2
3 45
10
–10
–.2
–150°
–30°
–.4
–120°
–90°
–60°
–.6
–.8
–1.5
–2
–1
–5
–4
–3
Test Condition : V
DS
= 3.5 V , V
G2S
= 3 V
I
D
= 10mA
50 to 1000 MHz (50 MHz step)
Test Condition : V
DS
= 3.5 V , V
G2S
= 3 V
I
D
= 10mA
50 to 1000 MHz (50 MHz step)
Rev.2.00 Aug 10, 2005 page 5 of 7
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