H5N2510DL datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> H5N2510DL

H5N2510DL: DescriptionSilicon N Channel MOS FET High Speed Power Switching; CategoryDiscrete semiconductor The transistor; File Size53KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

Download Datasheet Parametric Compare View All

H5N2510DL Overview

Silicon N Channel MOS FET High Speed Power Switching

H5N2510DL Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.97 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

Preview

Download Datasheet

View All

H5N2510DL, H5N2510DS

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1110-0200

(Previous: ADE-208-1379)

Rev.2.00

Sep 07, 2005

Features

•

Low on-resistance

•

Low drive current

•

High speed switching

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK (L)-(2) )

1. Gate

2. Drain

3. Source

4. Drain

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (S) )

Rev.2.00 Sep 07, 2005 page 1 of 4

Sales Strategic Planning Div.

Keep safety first in your circuit designs!

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's

application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,

diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of

publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is

therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product

information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor

home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to

evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes

no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life

is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a

product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater

use.

6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and

cannot be imported into a country other than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

RENESAS SALES OFFICES

Refer to "http://www.renesas.com/en/network" for the latest and detailed information.

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501

Renesas Technology Europe Limited

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.

Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900

Renesas Technology

Hong Kong Ltd.

7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2730-6071

Renesas Technology Taiwan Co.,

Ltd.

10th Floor, No.99, Fushing North Road, Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co.,

Ltd.

Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China

Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

Renesas Technology Singapore Pte. Ltd.

1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

Renesas Technology Korea Co., Ltd.

Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea

Tel: <82> 2-796-3115, Fax: <82> 2-796-2145

http://www.renesas.com

Renesas Technology Malaysia Sdn. Bhd.

Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia

Tel: <603> 7955-9390, Fax: <603> 7955-9510

Colophon .3.0

H5N2510DL Related Products

	H5N2510DL	H5N2510DL-E	H5N2510DS	H5N2510DSTL-E
Description	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	4	3	4
Reach Compliance Code	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V	250 V	250 V	250 V
Maximum drain current (ID)	5 A	5 A	5 A	5 A
Maximum drain-source on-resistance	0.97 Ω	0.97 Ω	0.97 Ω	0.97 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	3	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	20 A	20 A	20 A	20 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	YES	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Is it Rohs certified?	incompatible	conform to	-	conform to
JESD-609 code	e0	e6	-	e6
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	250
Terminal surface	TIN LEAD	TIN BISMUTH	-	TIN BISMUTH
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED

Recommended Resources

Power amplifier circuit with bass boost compensation

High current switching regulated power supply application circuit

Voltage-limiting nickel-cadmium battery charger circuit diagram

Current expansion circuit diagram

Schmitt trigger voltage controlled oscillator

Computer motherboard circuit diagram 810 2_06

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components