HVV0912-150-EK datasheet, PDF - EEWORLD Datasheet

The innovative Semiconductor Company!

HVV0912-150 HigH Voltage, HigH Ruggedness

TM

L-Band Avionics Pulsed Power Transistor

960-1215 MHz, 10μs Pulse, 10% Duty Cycle

For Ground and Air DME, TCAS and IFF Applications

FeatuRes

• Silicon MOSFET Technology

• Operation from 24V to 50V

• High Power Gain

• Extreme Ruggedness

• Internal Input and Output Matching

• Excellent Thermal Stability

• All Gold Bonding Scheme

tYPiCal PeRFoRManCe

High voltage vertical technology is well suited for high power pulsed applications in the

L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.

MODE

Class AB

FREQUENCY

(MHz)

VDD

(V)

IDQ

(mA)

Power

(W)

GAIN

(dB)

EFFICIENCY

(%)

IRL

(dB)

VSWR

20:1

1215

50

150

20

43

-5

Table 1:

Typical RF Performance in broadband text fixture at 25°C temperature with

RF pulse conditions of pulse width = 10μs and pulse period = 100μs.

desCRiPtion

The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed

for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFET™ technology

produces over 150W of pulsed output power while offering high gain, high efficiency, and ease of matching

with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is

specified to withstand a 20:1 VSWR at all phase angles under full rated output power..

oRdeRing inFoRMation

Device Part Number: HVV0912-150

Demo Kit Part Number: HVV0912-150-EK

Available through Richardson Electronics (http://rfwireless.rell.com/)

HVVi Semiconductors, Inc.

10235 S. 51st St. Suite 100

Phoenix, AZ. 85044

ISO 9001:2000 Certified

Tel: (866) 429-HVVi (4884) or visit www.hvvi.com

EG-01-DS11A

12/11/08

1

The innovative Semiconductor Company!

HVV0912-150 High Voltage, High Ruggedness

UHF Pulsed Power Transistor

HVV0912-150 HigH Voltage, HigH Ruggedness

UHF Pulsed Power Transistor

960-1215 MHz, 10µs Pulse, 10% Duty Cycle

L-Band Avionics Pulsed Power

For Ground and Air DME, TCAS and IFF Applications

Transistor

For Ground and Air DME, TCAS and

MHz, 10μs Pulse, 10% Duty Cycle

960-1215

IFF Applications

% Duty

For Ground and Air DME, TCAS and IFF Applications

% Duty

TM

ELECTRICAL CHARACTERISTICS

eleCtRiCal CHaRaCteRistiCs

Drain-Source Breakdown

Drain Leakage Current

Gate Leakage Current

Drain Leakage Current

Gate Leakage Current

Power Gain

Gate Leakage Current

Power Return Loss

Input Gain

Power

Return Loss

Input

Gain

Drain Efficiency

Input Return Loss

Drain Quiescent Voltage

Gate Efficiency

Drain Efficiency

Voltage

Gate Quiescent

Threshold Voltage

Gate Quiescent Voltage

Threshold Voltage

The innovative Semiconductor Company!

Symbol

V

BR(DSS)

V

BR(DSS)

V

BR(DSS)

I

DSS

I

DSS

I

GSS

I

DSS

I

GSS

G

P1

I

GSS

G

P1 1

IRL

G

P1

IRL

1

η

D1

1

IRL

η

D1

VGS(Q)

2

η

D1

VGS(Q)

2

VTH

VGS(Q)

2

VTH

Parameter

Breakdown

Parameter

Drain-Source

Parameter

VGS=0V,ID=5mA

VGS=0V,VDS=50V

VGS=5V,VDS=0V

VGS=0V,VDS=50V

VGS=5V,VDS=0V

F=1215MHz

VGS=5V,VDS=0V

F=1215MHz

VDD=50V,IDQ=50mA

F=1215MHz

VDD=50V,IDQ=50mA

VDD=5V, ID=300µA

VDD=50V,IDQ=50mA

VDD=5V, ID=300µA

VDD=5V, ID=300μA

Conditions

VGS=0V,ID=5mA

Conditions

Min

95

-

18

-

41

1.1

0.7

Min

Typical

Max

Min

95

102

95

102

-

50

-

50

-

50

1

200

-

1

18

20

18

1

20

5

-

-5

-

20

-5

-

41

43

41

-5

43

-3.5

1.1

1.45

1.1

43

1.45

0.7

1.2

1.45

0.7

1.2

1.8

1.2

1.7

Max

Unit

Max

-

V

-

V

200

µA

200

µA

5

μA

µA

5

µA

-

dB

μA

dB

-

-3.5

dB

-3.5

dB

-

%

-

dB

%

1.8

V

1.8

%

V

1.7

V

1.7

V

PULSE CHARACTERISTICS

PULSE

CHaRaCteRistiCs

Pulse

CHARACTERISTICS

Symbol

Parameter

Symbol Parameter

1

Symbol

Parameter

t

r

1

Rise Time

T

1

r

t

r1

Rise Time

t

f

Fall Time

1

Fall Time

t

f

Fall Time

T

PD

Pulse Droop

1

PD

Pulse Droop

PD

Pulse Droop

Conditions

F=1215MHz

Conditions

Typical

Min

Typical Max

Min

-

Typical

<17

50

<27

0.25

50

<27

0.25

0.5

Max

Units

Unit

Max

Units

50

nS

50

nS

50

0.5

dB

0.5

dB

THERMAL PERFORMANCE

THERMAL

PeRFoRManCe

tHeRMal

PERFORMANCE

Symbol

θ

JC1

θ

JC1

Parameter

Thermal Resistance

Max

0.13

Unit

°C/W

RUGGEDNESS PERFORMANCE

Ruggedness PeRFoRManCe

Parameter

Load

Mismatch

Tolerance

Test Condition

Test1215 MHz

F = Condition

F = 1215 MHz

Symbol

LMT

1

LMT

1

Max

20:1

Units

VSWR

The HVV0912-150 device is capable of withstanding an output load mismatch

The

HVV0912-150

is capable of withstanding an

withstanding

20:1 VSWR

The

HVV0912-150 device

20:1 VSWR capable of

output load mismatch corresponding to a

mismatch

corresponding to a device is at rated output power andan output load

nominal operating voltage

corresponding to a 20:1 VSWR at rated output

the frequency band of operation.

at rated

the frequency band

operating voltage

across

output power and nominal

of operation.

across

power and nominal operating voltage

across the frequency band of operation.

NOTE: All parameters measured under pulsed conditions at 150W output power measured at the 10%

1.) NOTE: All parameters measured under

cycle =

conditions

=

150W output power

point of the pulse with pulse width = 10μsec, duty

pulsed

10% and VDD

at

50V, IDQ = 50mA in a broad-

1.) NOTE: All the 10% point of the pulse with pulseconditions at 150W output power

measured at parameters measured under pulsed width = 10µsec, duty cycle = 10%

band matched test fixture.

measured at the 10% point of the pulse with pulse width = 10µsec, duty cycle = 10%

2

and VDD = 50V, IDQ = 50mA in a broadband matched test fixture.

NOTE: Amount of gate voltage required to attain nominal quiescent current.

and VDD = 50V, IDQ = 50mA in a broadband matched test fixture.

1

2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.

HVVi Semiconductors, Inc.

10235 S. 51st St. Suite 100

st

HVVi Semiconductors,100

10235 S. 51

st

St. Suite Inc.

Phoenix, AZ. 85044

10235 S. 51 85044 100

Phoenix, Az. St. Suite

Phoenix, Az. 85044

ISO 9001:2000 Certified

Tel: (866) 429-HVVi (4884) or

Certified

visit www.hvvi.com

ISO 9001:2000 or visit

www.hvvi.com

Tel: (866) 429-HVVi (4884)

(866)

Semiconductors, Inc.

visit

Rights Reserved.

Tel:

HVVi

429-HVVi (4884) or

All

www.hvvi.com

EG-01-DS11A

12/11/08

EG-01-DS11A

12/12/08

2

12/12/08

2

The innovative Semiconductor Company!

HVV0912-150 High Voltage,

HVV0912-150 HigH Voltage, HigH Ruggedness

High Ruggedness

UHF Pulsed Power Transistor

L-Band Avionics Pulsed Power Transistor

960-1215 MHz, 10µs Pulse, 10% Duty Cycle

10μs Pulse, 10% Duty Cycle

960-1215 MHz,

For Ground and Air DME, TCAS

Ground and Air DME, TCAS and IFF Applications

For

and IFF Applications

% Duty

TM

Z

o

= 10

Ω

1215MHz

The innovative Semiconductor Company!

Z

IN*

960MHz

Z

OUT*

HVVi Semiconductors, Inc.

10235 S. 51

st

St. Suite 100

HVVi Semiconductors, Inc.

Phoenix, Az. 85044

10235 S. 51st St. Suite 100

Phoenix, AZ. 85044

Tel: (866) 429-HVVi (4884) or visit www.hvvi.com

ISO 9001:2000 Certified

Tel: (866) 429-HVVi (4884) or visit

www.hvvi.com

ISO 9001:2000 Certified

EG-01-DS11A

12/12/08

EG-01-DS11A

3

12/11/08

3

The innovative Semiconductor Company!

HVV0912-150 High Voltage, High Ruggedness

Power Transistor

L-Band Avionics Pulsed

UHF Pulsed Power Transistor

960-1215

UHF Pulsed Power Transistor

Duty

MHz, 10μs Pulse, 10% Duty Cycle

960-1215 MHz, 10µs Pulse, 10%

Cycle

For Ground and Air DME, TCAS and IFF Applications

960-1215 MHz, 10µs Pulse, 10%

and IFF Applications

For Ground and Air DME, TCAS

Duty Cycle

For Ground and Air DME, TCAS and IFF Applications

% Duty

TM

HVV0912-150 HigH Voltage, HigH Ruggedness

The

The innovative Semiconductor Company!

innovative Semiconductor Company!

HVV0912-150 Demonstration Circuit Board Bill

(AutoCAD Files for Demonstration Board available online at

Bill

of Materials

HVV1012-250 Demonstration Circuit Board

www.hvvi.com/products)

of Materials

Part

C1,C2,C13 :

Part

C14:

C1,C2,C13 :

C15, C19:

C14:

C20:

C16,

C15, C19:

C14:

C16, C20:

R1:

C14:

R2:

R1:

C3:

R2:

C5:

C4,

C3:

C6:

C4,

C9:

C7,

C5:

C6:

C8:

C7, C9:

C10, C11:

C8:

C12:

C18:

C10, C11:

C15:

C12:

RF Connectors (2)

C18:

DC Drain Conn

C15:

DC Ground Conn.

RF Connectors (2)

DC

Drain Conn

DC

Gate Conn.

PCB Board

DC Ground Conn.

Heat Sink

DC Gate Conn.

Device Clamp

PCB Board

S.S. Screws

Heat Sink

(3)

Alloy Screws (4)

Device Clamp

Metal Washers(4)

S.S. Screws (3)

(AutoCAD

(4)

Alloy Screws

Files

Metal Washers(4)

Demonstration Board Outline

Demonstration

Circuit Board Picture

Demonstration Board Outline

Demonstration

Circuit Board Picture

(AutoCAD Files

Board Outline

online at www.hvvi.com/products)

Description

Part Number

Manufacturer

Demonstration

for Demonstration Board available

Demonstration Circuit Board Picture

39.0 pF ATC 100B Chip Capacitor

Description

1.0 uF, 100V Chip Capacitor (X7R 1210)

39.0 pF ATC 100B Chip Capacitor

10K pF 100V Chi Capacitor (X7R 1206)

1.0 uF, 100V Chip Capacitor (X7R 1210)

1K pF 100V Chi Capacitor (X7R 1206)

10K

ATC 100B Chip Capacitor

47 pF

pF 100V Chi Capacitor (X7R 1206)

1K pF 100V Chi Capacitor (X7R 1206)

10 Ohms Chip Resistor (1206) SMD

47 pF ATC

Chip

Chip Capacitor

1.0 K Ohms

100B

Resistor (1206) SMD

10 Ohms

100B Chip Capacitor

2.2 pF ATC

Chip Resistor (1206) SMD

1.0 K

ATC 100B Chip Capacitor

2.0 pF

Ohms Chip Resistor (1206) SMD

2.2 pF ATC 100B Chip Capacitor

2.7 pF ATC 100B Chip Capacitor

2.0 pF ATC 100B Chip Capacitor

1.0 pF ATC 100B Chip Capacitor

2.7 pF ATC 100B Chip Capacitor

1.8 pF ATC 100B Chip Capacitor

1.0 pF ATC 100B Chip Capacitor

3.3 pF ATC 100B Chip Capacitor

1.8

pF ATC

Capacitor

15.0

pF ATC 100B Chip

Capacitor

10uF

pF ATC 100B Chip Capacitor

63V Elect FK SMD

3.3

220uF

pF ATC 100B Chip Capacitor

15.0

63V Elect FK SMD

Type "N" RF connectors

10uF 63V Elect FK SMD

Connector Jack Banana Nylon Red

220uF 63V Elect FK SMD

Connector

RF connectors

Type "N"

Jack Banana Nylon Black

Connector Jack Banana Nylon Green

Connector Jack Banana Nylon Red

PCB: Arlon, 30 mils thick,

Nylon Black

Connector Jack Banana

2.55 Dielectric, 2 oz Copper

Cool Innovations

Banana Nylon Green

Connector Jack

Aluminum Heat Sink

Cool Innovations Nylon Clamp Foot

PCB: Arlon, 30 mils thick, 2.55 Dielectric, 2 oz Copper

4-40 X

Innovations Aluminum Heat Sink

Cool

1/4 Stainless Steel Hex Head Socket Screws

4-40 X

Innovations Nylon

Cap screw Hex Head

Cool

1/2 Alloy Socket

Clamp Foot

#4 Washer Zinc PLTD Steel Lock

Head Socket Screws

4-40 X 1/4 Stainless Steel Hex

100B390JP500X

Part Number

GRM32ER72A105MA01L

100B390JP500X

C1206C103K1RACTU

GRM32ER72A105MA01L

C1206C102K1RACTU

C1206C103K1RACTU

100B470JP500X

C1206C102K1RACTU

RC1206JR-07100KL

100B470JP500X

RC1206JR-07102KL

RC1206JR-07100KL

100B2R2JP500X

RC1206JR-07102KL

100B2R0JP500X

100B2R2JP500X

100B2R7JP500X

100B2R0JP500X

100B1R0JP500X

100B2R7JP500X

100B1R8JP500X

100B1R0JP500X

100B3R3JP500X

100B1R8JP500X

100B150JP500X

EEV-FK1J100P

100B3R3JP500X

EEV-FK1J221Q

100B150JP500X

5919CC-TB-7

EEV-FK1J100P

J151-ND

EEV-FK1J221Q

J152-ND

5919CC-TB-7

J153-ND

J151-ND

DS2346

J152-ND

3-252510RS3411

J153-ND

FXT000158 Rv.B

DS2346

P242393

3-252510RS3411

SCAS-0440-08C

FXT000158 Rv.B

ZSLW-004-M

P242393

ATC

Manufacturer

Murata

ATC

Kemet

Murata

Kemet

ATC

Kemet

DIGI-KEY

ATC

DIGI-KEY

ATC

DIGI-KEY

ATC

Panasonic

ATC

Panasonic

ATC

Coaxicom

Panasonic

DIGI-KEY

Panasonic

DIGI-KEY

Coaxicom

DIGI-KEY

DS Electronics

DIGI-KEY

Cool

DIGI-KEY

Innovation

Cool

DS Electronics

Innovation

Small Parts Inc

Cool Innovation

Small Parts Inc

Bolt

Copper State

Copper State Bolt

Cool Innovation

for Demonstration Board available online at

www.hvvi.com/products)

Small Parts Inc

SCAS-0440-08C

4-40 X 1/2 Alloy Socket Cap screw Hex Head

#4 Washer Zinc PLTD Steel Lock

ZSLW-004-M

Small Parts Inc

HVV0912-150 Demonstration Circuit Board Bill of Materials

HVVi Semiconductors, Inc.

10235 S. 51

st

St. Suite 100

10235 S. 51st St. Suite 100

Phoenix, Az. 85044

HVVi Semiconductors, Inc.

Phoenix, AZ. 85044

st

10235 S. 51 St. Suite 100

Phoenix, Az. 85044

HVVi Semiconductors, Inc.

ISO 9001:2000 Certified

Tel: (866) 429-HVVi (4884) or visit

www.hvvi.com

Tel:

2008 HVVi Semiconductors,

visit

©

(866) 429-HVVi (4884) or

Inc.

www.hvvi.com

ISO 9001:2000 Certified

Tel: (866) 429-HVVi (4884) or visit

www.hvvi.com

EG-01-DS11A

12/12/08

12/11/08

4

EG-01-DS11A

4

12/12/08

4

The innovative Semiconductor Company!

HVV0912-150 HigH Voltage, HigH Ruggedness

Pulsed

HVV0912-150 High Voltage,

L-Band Avionics10μs Pulse, 10% Duty Cycle

High Ruggedness

Power Transistor

960-1215 MHz,

UHF Pulsed Power Transistor

Ground and Air DME, TCAS and IFF Applications

For

960-1215 MHz, 10µs Pulse, 10% Duty Cycle

For

PaCKage diMensions

TCAS and IFF Applications

Ground and Air DME,

%

PACKAGE DIMENSIONS

Duty

TM

DRAIN

GATE

SOURCE

The innovative Semiconductor Company!

Note: Drawing

Note: Drawing is not actual size.

is not actual size.

HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published

in this document at any time and without notice. This document supersedes and replaces all

information supplied prior to the publication hereof. Information in this document is believed to

be accurate and reliable. However, HVVi does not give any representations or warranties, either

express or implied, as to the accuracy or completeness of such information and shall have no liability

for the consequences of use of such information. Use of HVVi products as critical components in

life support systems is not authorized. No licenses, either express or implied, are conveyed under

any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are

trademarks of HVVi Semiconductors, Inc.

HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this

document at any time and without notice. This document supersedes and replaces all information

supplied prior to the publication hereof. Information in this document is believed to be accurate and

reliable. However, HVVi does not give any representations or warranties, either express or implied, as to

the accuracy or completeness of such information and shall have no liability for the consequences of use

of

HVVi Semiconductors,

Use of HVVi products

ISO 9001:2000 Certified

in life support systems is not

such information.

Inc.

as critical components

EG-01-DS11A

authorized. No

Suite 100

either express or

429-HVVi (4884) or visit www.hvvi.com

HVVi intellectual property

Tel: (866)

implied, are conveyed under any

12/11/08

10235 S. 51st St.

licenses,

rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors,

5

Phoenix, AZ. 85044

Inc.

HVV0912-150-EK

HVV0912-150-EK Overview

Preview

HVV0912-150-EK Related Products

Recommended Resources