TC4426
TC4427
TC4428
1.5A DUAL HIGH-SPEED, POWER MOSFET DRIVERS
FEATURES
s
s
s
s
s
s
High Peak Output Current ............................... 1.5A
Wide Operating Range .......................... 4.5V to 18V
High Capacitive Load
Drive Capability ........................ 1000 pF in 25 nsec
Short Delay Time ................................ <40nsec Typ
Consistent Delay Times With Changes in
Supply Voltage
Low Supply Current
— With Logic “1” Input .................................... 4mA
— With Logic “0” Input ................................. 400
µ
A
Low Output Impedance ....................................... 7
Ω
Latch-Up Protected: Will Withstand >0.5A
Reverse Current ................................. Down to – 5V
Input Will Withstand Negative Inputs
ESD Protected .....................................................4kV
Pinout Same as TC426/TC427/TC428
1
GENERAL DESCRIPTION
The TC4426/4427/4428 are improved versions of the
earlier TC426/427/428 family of buffer/drivers (with which
they are pin compatible). They will not latch up under any
conditions within their power and voltage ratings. They are
not subject to damage when up to 5V of noise spiking (of
either polarity) occurs on the ground pin. They can accept,
without damage or logic upset, up to 500mA of reverse
current (of either polarity) being forced back into their
outputs. All terminals are fully protected against up to 4kV of
electrostatic discharge.
As MOSFET drivers, the TC4426/4427/4428 can easily
switch 1000 pF gate capacitances in under 30nsec, and
provide low enough impedances in both the ON and OFF
states to ensure the MOSFET's intended state will not be
affected, even by large transients.
Other compatible drivers are the TC4426A/27A/28A.
These drivers have matched input to output leading edge
and falling edge delays, tD1 and tD2, for processing short
duration pulses in the 25 nanoseconds range. They are pin
compatible with the TC4426/27/28.
FUNCTIONAL BLOCK DIAGRAM
V
DD
INVERTING
OUTPUTS
2
3
4
5
OUTPUT
s
s
s
s
s
ORDERING INFORMATION
Part No.
TC4426COA
TC4426CPA
TC4426EOA
TC4426EPA
TC4426MJA
TC4427COA
TC4427CPA
TC4427EOA
TC4427EPA
TC4427MJA
TC4428COA
TC4428CPA
TC4428EOA
TC4428EPA
TC4428MJA
Package
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin SOIC
8-Pin Plastic DIP
8-Pin CerDIP
Temperature
Range
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
0°C to +70°C
0°C to +70°C
– 40°C to +85°C
– 40°C to +85°C
– 55°C to +125°C
300 mV
NONINVERTING
OUTPUTS
6
7
INPUT
4.7V
TC4426/TC4427/TC4428
GND
EFFECTIVE INPUT
C = 12 pF
NOTES:
1.TC4426 has 2 inverting drivers; TC4427 has 2 noninverting drivers.
2. TC4428 has one inverting and one noninverting driver.
3. Ground any unused driver input.
8
TC4426/7/8-8
10/21/96
TELCOM SEMICONDUCTOR, INC.
4-245
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +22V
Input Voltage, IN A or IN B . (V
DD
+ 0.3V) to (GND – 5.0V)
Maximum Chip Temperature ................................. +150°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
Package Thermal Resistance
CerDIP R
θJ-A
................................................ 150°C/W
CerDIP R
θJ-C
.................................................. 50°C/W
PDIP R
θJ-A
................................................... 125°C/W
PDIP R
θJ-C
..................................................... 42°C/W
SOIC R
θJ-A
................................................... 155°C/W
SOIC R
θJ-C
..................................................... 45°C/W
PIN CONFIGURATIONS
NC 1
IN A 2
GND 3
IN B 4
8 NC
7 OUT A
NC 1
IN A 2
GND 3
IN B 4
Operating Temperature Range
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Package Power Dissipation (T
A
≤
70°C)
Plastic .............................................................730mW
CerDIP ............................................................800mW
SOIC ...............................................................470mW
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
8 NC
7 OUT A
NC 1
IN A 2
GND 3
IN B 4
2
7
8 NC
7 OUT A
TC4426
6 V
DD
5 OUT B
TC4427
6 VDD
5 OUT B
TC4428
6 VDD
5 OUT B
2,4
7,5
2,4
7,5
4
5
INVERTING
NC = NO INTERNAL CONNECTION
NOTE:
SOIC pinout is identical to DIP.
NONINVERTING
DIFFERENTIAL
ELECTRICAL CHARACTERISTICS:
T
A
= +25°C with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
2.4
—
–1
V
DD
– 0.025
—
—
—
> 0.5
—
—
—
—
—
7
1.5
—
—
0.8
1
—
0.025
10
—
—
V
V
µA
V
V
Ω
A
A
Parameter
Test Conditions
Min
Typ
Max
Unit
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
= 18V, I
O
= 10 mA
Duty Cycle
≤
2%, t
≤
30
µsec
Duty Cycle
≤
2%
t
≤
30
µsec
Figure 1
Figure 1
Figure 1
Figure 1
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
—
—
—
—
—
—
19
19
20
40
—
—
30
30
30
50
4.5
0.4
nsec
nsec
nsec
nsec
mA
mA
Power Supply
I
S
NOTE:
1. Switching times are guaranteed by design.
4-246
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
ELECTRICAL CHARACTERISTICS (CONT.):
Specifications measured over operating temperature
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 High Input Voltage
Logic 0 Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
2.4
—
– 10
V
DD
– 0.025
—
—
—
> 0.5
—
—
—
—
—
9
1.5
—
—
0.8
10
—
0.025
12
—
—
V
V
µA
V
V
Ω
A
A
1
range with 4.5V
≤
V
DD
≤
18V, unless otherwise specified.
Min
Typ
Max
Unit
Parameter
Test Conditions
2
3
4
5
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
I
PK
I
REV
V
DD
= 18V, I
O
= 10 mA
Duty Cycle
≤
2%, t
≤
300µsec
Duty Cycle≤ 2%
t
≤
300µsec
Figure 1
Figure 1
Figure 1
Figure 1
V
IN
= 3V (Both Inputs)
V
IN
= 0V (Both Inputs)
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
—
—
—
—
—
—
—
—
—
—
—
—
40
40
40
60
8
0.6
nsec
nsec
nsec
nsec
mA
Power Supply
I
S
NOTE:
1. Switching times are guaranteed by design.
10
–8
9
8
7
6
5
Crossover Energy Loss
+5V
INPUT
0V
10%
tD1
90%
90%
VDD= 18V
4.7 µF
0.1 µF
tF
tD2
A • sec
4
3
INPUT
VDD
OUTPUT
tR
90%
6
2,4
5,7
0V
OUTPUT
10%
10%
2
CL = 1000 pF
Inverting Driver
6
t
F
+5V
INPUT
90%
10
–9
4
6
8
10
12
VDD
14
16
18
3
0V
VDD
INPUT: 100 kHz, square wave,
tRISE = tFALL
≤
10ns
10%
90%
90%
tD2
10%
tD1
Thermal Derating Curves
1600
1400
8 Pin DIP
8 Pin CerDIP
1000
800
8 Pin SOIC
600
400
200
0
0
10
20
30
40
50
60
70
80
90
100
110
120
OUTPUT
0V
10%
tR
MAX. POWER (mW)
Noninverting Driver
7
1200
Figure 1. Switching Time Test Circuit
NOTE:
The values on this graph represent the loss seen by both drivers in a package
during one complete cycle. For a single driver, divide the stated values by 2. For a
single transition of a single driver, divide the stated value by 4.
AMBIENT TEMPERATURE (°C)
8
TELCOM SEMICONDUCTOR, INC.
4-247
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
TYPICAL CHARACTERISTICS
Rise Time vs. Supply Voltage
100
100
Fall Time vs. Supply Voltage
2200 pF
80
2200 pF
80
T
A
= 25°C
T
A
= 25°C
1500 pF
tRISE (nsec)
tFALL (nsec)
1500 pF
60
60
1000 pF
40
1000 pF
40
470 pF
20
20
470 pF
100 pF
100 pF
0
0
4
6
8
10
12
VDD
14
16
18
4
6
8
10
12
VDD
14
16
18
Rise TIme vs. Capacitive Load
100
T
A
= 25°C
80
100
Fall TIme vs. Capacitive Load
T
A
= 25°C
80
5V
5V
tRISE (nsec)
60
10V
15V
tFALL (nsec)
60
10V
15V
40
40
20
20
0
100
1000
CLOAD (pF)
10,000
0
100
1000
CLOAD (pF)
10,000
Rise and Fall Times vs. Temperature
60
C LOAD = 1000 pF
VDD = 17.5V
DELAY TIME (nsec)
Propagation Delay vs. Supply Voltage
60
t D2
50
CLOAD = 1000 pF
50
TIME (nsec)
40
40
T
A
= 25°C
tD1
30
tFALL
20
tRISE
30
20
10
–55 –35 –15
10
5
25 45 65 85
TEMPERATURE (°C)
105 125
4
6
8
10
12
VDD
14
16
18
4-248
TELCOM SEMICONDUCTOR, INC.
1.5A DUAL HIGH-SPEED
POWER MOSFET DRIVERS
TC4426
TC4427
TC4428
TYPICAL CHARACTERISTICS
(Cont.)
Effect of Input Amplitude on Delay Time
60
C LOAD = 1000 pF
50
DELAY TIME (nsec)
1
Propagation Delay Time vs. Temperature
60
VDD = 18V
VLOAD= 1000 pF
t D2
40
t D1
2
3
VDD = 10V
DELAY TIME (nsec)
50
40
t D2
30
30
20
t D1
20
10
0
2
4
6
VDRIVE (V)
8
10
10
–55 –35 –15
5
25 45
TA (°C)
65
85
105 125
4
5
Quiescent Supply Current vs. Voltage
TA = +25°C
IQUIESCENT (mA)
Quiescent Supply Current vs. Temperature
4.0
V DD = 18V
3.5
I
QUIESCENT
(mA)
BOTH INPUTS = 1
1
3.0
BOTH INPUTS = 1
2.5
BOTH INPUTS = 0
0.1
4
6
8
10
12
VDD
14
16
18
2.0
–55 –35 –15
5
25 45
TA (°C)
65
85
105 125
6
7
High-State Output Resistance
25
25
Low-State Output Resistance
20
RDS(ON) (Ω)
RDS(ON) (Ω)
20
WORST CASE @ TJ = +150°C
WORST CASE @ TJ = +150°C
15
15
10
8
5
TYP @ TA = +25°C
10
8
5
TYP @ TA = +25°C
4
6
8
10
VDD
12
14
16
18
4
6
8
10
12
VDD
14
16
18
8
4-249
TELCOM SEMICONDUCTOR, INC.
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