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BAV20W

Description
0.2 A, 250 V, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size124KB,4 Pages
ManufacturerTak Cheong
Websitehttp://www.takcheong.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

BAV20W Overview

0.2 A, 250 V, SILICON, SIGNAL DIODE

BAV20W Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTak Cheong
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.4 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL
SEMICONDUCTOR
400mW SOD-123 SURFACE MOUNT
Small Outline Flat Lead Plastic Package
High Voltage & High Conductance
Fast Switching Diode
Absolute Maximum Ratings
Symbol
P
D
T
STG
T
J
V
RRM
I
F(AV)
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
T
A
= 25°C unless otherwise noted
Value
400
-65 to +150
+150
250
200
Units
mW
°C
°C
V
mA
Parameter
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Diode
General Purpose Diodes High Voltage Application Diodes
Flat Lead SOD-123 Small Outline Plastic Package
Surface Device Type Mounting
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Band Indicates Cathode
DEVICE MARKING CODE:
Device Type
BAV19W
BAV20W
BAV21W
Device Marking
H1
H2
H3
Electrical Characteristics
Symbol
B
V
Breakdown Voltage
T
A
= 25°C unless otherwise noted
Parameter
BAV19W
BAV20W
BAV21W
Test Condition
I
R
=100µA
Limits
Min
120
200
250
V
R
=100V
V
R
=150V
V
R
=200V
I
F
=100mA
I
F
=200mA
---
---
---
---
---
Max
---
---
---
100
100
100
1.0
1.25
Volts
Volts
Volts
nA
nA
nA
Volts
Volts
Unit
I
R
Reverse Leakage Current
BAV19W
BAV20W
BAV21W
V
F
Forward Voltage
T
RR
Reverse Recovery Time
I
F
=I
R
=30mA
R
L
=100Ω
I
RR
=3mA
---
50
nS
C
Capacitance
V
R
=0V, f=1M
HZ
---
5.0
pF
Nov 2008 Release, Revision E
Page 1
BAV19W/BAV20W/BAV21W
TAK CHEONG
®

BAV20W Related Products

BAV20W BAV19W BAV21W
Description 0.2 A, 250 V, SILICON, SIGNAL DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE 0.2 A, 250 V, SILICON, SIGNAL DIODE
Is it Rohs certified? conform to conform to conform to
package instruction R-PDSO-F2 ROHS COMPLIANT, PLASTIC PACKAGE-2 ROHS COMPLIANT, PLASTIC PACKAGE-2
Contacts 2 2 2
Reach Compliance Code compli compli compli
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 0.2 A 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum power dissipation 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 250 V 250 V 250 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
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