VISHAY
BC846 to BC849
Vishay Semiconductors
Small Signal Transistors (NPN)
Features
• These transistors are subdivided into three groups
(A, B, and C) according to their current gain. The
type BC846 is available in groups A and B, how-
ever, the types BC847 and BC848 can be supplied
in all three groups. The BC849 is a low noise type
available in groups B and C. As complementary
types, the PNP transistors BC856...BC859 are
recommended.
• NPN Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
2
1
1
B
3
C 3
E 2
18822
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
BC846A
BC846B
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
BC849B
BC849C
Ordering code
BC846A-GS18 or BC846A-GS08
BC846B-GS18 or BC846B-GS08
BC847A-GS18 or BC847A-GS08
BC847B-GS18 or BC847B-GS08
BC847C-GS18 or BC847C-GS08
BC848A-GS18 or BC848A-GS08
BC848B-GS18 or BC848B-GS08
BC848C-GS18 or BC848C-GS08
BC849B-GS18 or BC849B-GS08
BC849C-GS18 or BC849C-GS08
1A
1B
1E
1F
1G
1J
1K
1L
2B
2C
Marking
Remarks
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Document Number 85115
Rev. 1.2, 12-Mar-04
www.vishay.com
1
BC846 to BC849
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - base voltage
Test condition
Part
BC846
BC847
BC848
BC849
Collector - emitter voltage
BC846
BC847
BC848
BC849
BC846
BC847
BC848
BC849
Emitter - base voltage
BC846
BC847
BC848
BC849
Collector current
Collector peak current
Peak base current
Peak emitter current
Power dissipation
1)
VISHAY
Symbol
V
CBO
V
CBO
V
CBO
V
CBO
V
CES
V
CES
V
CES
V
CES
V
CEO
V
CEO
V
CEO
V
CEO
V
EBO
V
EBO
V
EBO
V
EBO
I
C
I
CM
I
BM
- I
EM
Value
80
50
30
30
80
50
30
30
65
45
30
30
6
6
5
5
100
200
200
200
310
1)
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
mA
mA
mA
mA
mW
T
amb
= 25 °C
P
tot
Device on fiberglass substrate, see layout on third page.
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Thermal resistance junction to
substrate backside
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
θJA
R
θSB
T
j
T
S
Value
450
1)
320
1)
150
- 65 to + 150
Unit
°C/W
°C/W
°C
°C
Device on fiberglass substrate, see layout on third page.
Electrical DC Characteristics
Parameter
Small signal current gain
(current gain group A)
Small signal current gain
(current gain group B)
Small signal current gain
(current gain group C)
Input impedance
(current gain group A)
Input impedance
(current gain group B)
Test condition
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
Symbol
h
fe
h
fe
h
fe
h
ie
h
ie
1.6
3.2
Min
Typ.
220
330
600
2.7
4.5
4.5
8.5
kΩ
kΩ
Max.
Unit
www.vishay.com
2
Document Number 85115
Rev. 1.2, 12-Mar-04
VISHAY
Parameter
Input impedance
(current gain group C)
Output admittance
(current gain group A)
Output admittance
(current gain group B)
Output admittance
(current gain group C)
Reverse voltage transfer ratio
(current gain group A)
Reverse voltage transfer ratio
(current gain group B)
Reverse voltage transfer ratio
(current gain group C)
DC current gain
(current gain group A)
DC current gain
(current gain group B)
DC current gain
(current gain group C)
DC current gain
(current gain group A)
DC current gain
(current gain group B)
DC current gain
(current gain group C)
Collector saturation voltage
Base saturation voltage
Base-emitter voltage
Collector-base cut-off current
Test condition
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 2 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
I
C
= 100 mA, I
B
= 5 mA
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10 mA
V
CB
= 30 V
V
CB
= 30 V, T
J
= 150 °C
Symbol
h
ie
h
oe
h
oe
h
oe
h
re
h
re
h
re
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BEon
V
BE
I
CBO
I
CBO
580
110
200
420
Min
6
BC846 to BC849
Vishay Semiconductors
Typ.
8.7
18
30
60
1.5 x 10
-4
2 x 10
-4
3 x 10
-4
90
150
270
180
290
520
90
200
700
900
660
700
770
15
5
220
450
800
250
600
mV
mV
mV
mV
mV
mV
nA
µA
Max.
15
30
60
110
Unit
kΩ
µS
µS
µS
Electrical AC Characteristics
Parameter
Gain bandwidth product
Collector-base capacitance
Emitter - base capacitance
Noise figure
Test condition
V
CE
= 5 V, I
C
= 10 mA,
f = 100 MHz
V
CB
= 10 V, f = 1 MHz
V
EB
= 0.5 V, f = 1 MHz
V
CE
= 5 V, I
C
= 200
µA,
R
G
= 2 kΩ, f = 1 kHz,
∆f
= 200 Hz
V
CE
= 5 V, I
C
= 200
µA,
R
G
= 2 kΩ, f = 1 kHz,
∆f
= 200 Hz
BC846
Part
Symbol
f
T
C
CBO
C
EBO
F
Min
Typ.
300
3.5
9
2
10
6
Max
Unit
MHz
pF
pF
dB
BC847
F
2
10
dB
BC848
BC849
V
CE
= 5 V, I
C
= 200
µA,
R
G
= 2 kΩ, f = (30 to 15000) Hz
BC849
F
F
F
2
1.2
1.4
10
4
4
dB
dB
dB
Document Number 85115
Rev. 1.2, 12-Mar-04
www.vishay.com
3
BC846 to BC849
Vishay Semiconductors
Layout for R
θJA
test
Thickness: Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
7.5 (0.3)
3 (0.12)
1 (0.4)
12 (0.47)
15 (0.59)
0.8 (0.03)
VISHAY
2 (0.8)
1 (0.4)
2 (0.8)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
P
tot
- Admissible Power Dissipation ( mW )
500
400
300
200
100
0
0
1000
T
amb
= 100
°
C
h
FE
- DC Current Gain
100
25
°
C
- 50° C
V
CE
= 5 V
10
20 40 60 80 100 120 140 160 180 200
T
amb
- Ambient Temperature (
°C
)
18824
1
0.01
18823
0.1
1
10
I
C
- Collector Current ( mA )
100
Fig. 1 Admissible Power Dissipation vs. Temperature of
Substrate Backside
Fig. 2 DC Current Gain vs. Collector Current
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4
Document Number 85115
Rev. 1.2, 12-Mar-04
VISHAY
BC846 to BC849
Vishay Semiconductors
10
0
R
thSB
- Pulse Thermal Resistance
0.5
Base Capacitance ( pF )
10
C
CBO
/ C
EBO
- Collector / Emitter
0.2
10
-1
0.1
0.05
0.02
10
-2
0.01
0.005
t
p
8
6
C
EBO
C
CBO
4
½
= t
p
/T
P
I
2
0
0.1
T
amb
= 25
°
C
1
10
V
CBO
, V
EBO
- Reverse Bias Voltage ( V )
18825
T
½
= 0
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
- Pulse Length ( s )
18828
Fig. 3 Pulse Thermal Resistance vs. Pulse Duration (normalized)
Fig. 6 Collector Base Capacitance, Emitter base Capacitance vs.
Bias Voltage
I
CBO
- Collector-Base Cutoff Current ( nA )
V
CEsat
- Collector Saturation Voltage ( V )
10000
maximum
1000
0.5
0.4
0.3
0.2
0.1
0
0.1
I
C
/ I
B
= 20
100
typical
10
1
0.1
0
Test voltage V
CBO
:
equal to the given
maximum value V
CES
20 40 60 80 100 120 140 160 180 200
T
amb
- Ambient Temperature (° C )
T
amb
= 100° C
25° C
- 50° C
1
10
I
C
- Collector Current ( mA )
100
18826
18829
Fig. 4 Collector-Base Cutoff Curent vs. Ambient Temperature
Fig. 7 Collector Saturation Voltage vs. Collector Current
100
I
C
- Collector Current ( mA )
V
CE
= 5 V
h
e
( I
C
) / h
e
( I
C
= 2 mA )
100
V
CE
= 5 V
T
amb
= 25
°
C
10
T
amb
= 100° C
10
h
ie
h
re
1
h
fe
h
oe
0.1
0.1
1
I
C
- Collector Current ( mA )
10
1
- 50° C
25° C
0.1
0
0.2
0.4
0.6
0.8
1
18827
V
BE
- Base-Emitter Voltage ( V )
18830
Fig. 5 Collector Current vs. Base-Emitter Voltage
Fig. 8 Relative h-Parameters vs. Collector Current
Document Number 85115
Rev. 1.2, 12-Mar-04
www.vishay.com
5
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