SMD Type
Transistors
IC
NPN Epitaxial Planar Silicon Transistor
2SC4519
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
Adoption of FBET process.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small-sized package.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
T
j
T
stg
Rating
60
45
5
500
1
200
150
-55 to +150
Unit
V
V
V
mA
A
mW
0-0.1
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1
SMD Type
2SC4519
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Turn-on time
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= 45V, I
E
=0
V
EB
= 3V, I
C
=0
V
CE
= 2V , I
C
= 50mA
V
CE
= 2V , I
C
= 50mA
V
CB
= 10V , f = 1.0MHz
100
Min
Transistors
IC
Typ
Max
0.5
0.5
400
Unit
ìA
ìA
360
4
0.15
0.8
60
45
5
60
120
0.45
1.2
MHz
pF
V
V
V
V
V
ns
V
CE(sat)
I
C
= 200mA , I
B
= 10mA
V
BE(sat)
I
C
= 200mV , I
B
= 10mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
t
on
Storage time
t
stg
150
270
ns
Fall time
t
f
200
350
ns
h
FE
Classification
Marking
Rank
hFE
4
100 200
TT
5
140 280
6
200 400
2
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