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BCX70

Description
200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size37KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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BCX70 Overview

200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BCX70 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum on-time150 ns
Maximum off time800 ns
Maximum collector current0.2000 A
Maximum Collector-Emitter Voltage45 V
Processing package descriptionSOT-23, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
Transistor component materialsSILICON
Maximum ambient power consumption0.3500 W
Transistor typeGENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor60
Rated crossover frequency125 MHz
SMD Type
NPN General Purpose Transistors
BCX70 series
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
Low current (max. 100 mA).
Low voltage (max. 45 V).
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Collector dissipation
Junction temperature
Storage temperature
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
C
T
j
T
stg
T
amb
R
th(j-a)
Rating
45
45
5
100
200
200
250
150
-65 to +150
-65 to +150
500
K/W
Unit
V
V
V
mA
mA
mA
mW
+0.1
0.38
-0.1
0-0.1
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BCX70 BCX70G BCX70J BCX70H BCX70K
Description 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB 200 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 3 3 3 3 3
Transistor polarity NPN NPN NPN NPN NPN
Maximum collector current 0.2000 A 0.2000 A 0.1000 A 0.1000 A 0.2000 A
Maximum Collector-Emitter Voltage 45 V 45 V 45 V 45 V 45 V
state ACTIVE ACTIVE TRANSFERRED ACTIVE DISCONTINUED
packaging shape RECTANGULAR RECTANGULAR Rectangle RECTANGULAR Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL pair DUAL pair
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy
structure SINGLE SINGLE single SINGLE single
Number of components 1 1 1 1 1
Transistor component materials SILICON SILICON silicon SILICON silicon
Maximum ambient power consumption 0.3500 W 0.3500 W 0.3300 W 0.2500 W 0.2000 W
Transistor type GENERAL PURPOSE SMALL SIGNAL GENERAL PURPOSE SMALL SIGNAL Universal small signal GENERAL PURPOSE SMALL SIGNAL Universal small signal
Minimum DC amplification factor 60 60 90 70 380
Rated crossover frequency 125 MHz 125 MHz 250 MHz 250 MHz 125 MHz
Maximum on-time 150 ns 150 ns - 150 ns -
Maximum off time 800 ns 800 ns - 800 ns -
Processing package description SOT-23, 3 PIN SOT-23, 3 PIN - PLASTIC PACKAGE-3 -
Lead-free Yes Yes - Yes Yes
EU RoHS regulations Yes Yes - Yes Yes
terminal coating MATTE TIN MATTE TIN - TIN tin silver copper
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