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5962-9459903MYC

Description
Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28
Categorystorage    storage   
File Size491KB,14 Pages
ManufacturerSimtek
Websitehttp://www.simtek.com
Download Datasheet Parametric Compare View All

5962-9459903MYC Overview

Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28

5962-9459903MYC Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionQCCN,
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time35 ns
JESD-30 codeR-CQCC-N28
JESD-609 codee4
length13.97 mm
memory density65536 bit
Memory IC TypeNON-VOLATILE SRAM
memory width8
Number of functions1
Number of ports1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize8KX8
Output characteristics3-STATE
ExportableYES
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Filter levelMIL-STD-883
Maximum seat height2.29 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width8.89 mm
Base Number Matches1
STK12C68
STK12C68-M SMD#5962-94599
8K x 8
AutoStore™
nvSRAM
QuantumTrap™
CMOS
Nonvolatile Static RAM
FEATURES
• 25ns, 45ns and 55ns Access Times
• “Hands-off” Automatic
STORE
with External
68μF Capacitor on Power Down
STORE
to Nonvolatile Elements Initiated by
Hardware, Software or
AutoStore™
on Power
Down
RECALL
to SRAM Initiated by Software or
Power Restore
• 10mA Typical I
CC
at 200ns Cycle Time
• Unlimited READ, WRITE and
RECALL
Cycles
• 1,000,000
STORE
Cycles to Nonvolatile Ele-
ments (Commercial/Industrial)
• 100-Year Data Retention in Nonvolatile Ele-
ments (Commercial/Industrial)
• Commercial, Industrial and Military Tempera-
tures
• 28-Pin SOIC, DIP and LCC Packages
DESCRIPTION
The Simtek STK12C68 is a fast static
RAM
with a
nonvolatile element incorporated in each static
memory cell. The
SRAM
can be read and written an
unlimited number of times, while independent, non-
volatile data resides in Nonvolatile Elements. Data
transfers from the
SRAM
to the Nonvolatile Elements
(the
STORE
operation) can take place automatically
on power down. A 68μF or larger capacitor tied from
V
CAP
to ground guarantees the
STORE
operation,
regardless of power-down slew rate or loss of power
from “hot swapping”. Transfers from the Nonvolatile
Elements to the
SRAM
(the
RECALL
operation) take
place automatically on restoration of power. Initia-
tion of
STORE
and
RECALL
cycles can also be soft-
ware controlled by entering specific read
sequences. A hardware
STORE
may be initiated with
the HSB pin.
BLOCK DIAGRAM
V
CCX
V
CAP
POWER
CONTROL
PIN CONFIGURATIONS
V
CAP
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
QUANTUM TRAP
128 x 512
A
5
ROW DECODER
A
6
A
7
A
8
A
9
A
11
A
12
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
STORE
STATIC RAM
ARRAY
128 x 512
RECALL
STORE/
RECALL
CONTROL
HSB
V
CCX
W
HSB
A
8
A
9
A
11
G
A
10
E
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
28 - LCC
SOFTWARE
DETECT
A
0
- A
12
28 - DIP
28 - SOIC
INPUT BUFFERS
COLUMN I/O
COLUMN DEC
PIN NAMES
A
0
- A
12
DQ
0
-DQ
7
E
W
Address Inputs
Data In/Out
Chip Enable
Write Enable
Output Enable
Hardware Store Busy (I/O)
Power (+ 5V)
Capacitor
Ground
A
0
A
1
A
2
A
3
A
4
A
10
G
E
W
G
HSB
V
CCX
V
CAP
V
SS
August 2006
1
Document Control # ML0008 rev 0.6

5962-9459903MYC Related Products

5962-9459903MYC
Description Non-Volatile SRAM, 8KX8, 35ns, CMOS, CQCC28, CERAMIC, LCC-28
Is it Rohs certified? incompatible
package instruction QCCN,
Reach Compliance Code unknown
ECCN code 3A001.A.2.C
Maximum access time 35 ns
JESD-30 code R-CQCC-N28
JESD-609 code e4
length 13.97 mm
memory density 65536 bit
Memory IC Type NON-VOLATILE SRAM
memory width 8
Number of functions 1
Number of ports 1
Number of terminals 28
word count 8192 words
character code 8000
Operating mode ASYNCHRONOUS
Maximum operating temperature 125 °C
Minimum operating temperature -55 °C
organize 8KX8
Output characteristics 3-STATE
Exportable YES
Package body material CERAMIC, METAL-SEALED COFIRED
encapsulated code QCCN
Package shape RECTANGULAR
Package form CHIP CARRIER
Parallel/Serial PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Certification status Not Qualified
Filter level MIL-STD-883
Maximum seat height 2.29 mm
Maximum supply voltage (Vsup) 5.5 V
Minimum supply voltage (Vsup) 4.5 V
Nominal supply voltage (Vsup) 5 V
surface mount YES
technology CMOS
Temperature level MILITARY
Terminal surface GOLD
Terminal form NO LEAD
Terminal pitch 1.27 mm
Terminal location QUAD
Maximum time at peak reflow temperature NOT SPECIFIED
width 8.89 mm
Base Number Matches 1
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