BDT31B datasheet, PDF - EEWORLD Datasheet

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BDT31B: Descriptionisc Silicon NPN Power Transistors; File Size82KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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BDT31B Overview

isc Silicon NPN Power Transistors

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon NPN Power Transistors

DESCRIPTION

·DC

Current Gain -h

= 25(Min)@ I

1.0A

·Collector-Emitter

Sustaining Voltage-

: V

CEO(SUS)

= 40V(Min)- BDT31; 60V(Min)- BDT31A

80V(Min)- BDT31B; 100V(Min)- BDT31C

·Complement

to Type BDT32/A/B/C

APPLICATIONS

·Designed

for use in audio output stages and general amplifier

and switching applications.

ABSOLUTE MAXIMUM RATINGS(T

=25

℃

)

SYMBOL

PARAMETER

BDT31

BDT 31A

CBO

Collector-Base Voltage

BDT 31B

BDT 31C

BDT31

BDT 31A

CEO

Collector-Emitter Voltage

BDT 31B

BDT 31C

EBO

BDT31/A/B/C

VALUE

100

UNIT

120

140

100

150

-65~150

℃

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

Collector Power Dissipation

=25℃

Junction Temperature

Storage Ttemperature Range

stg

THERMAL CHARACTERISTICS

SYMBOL

th j-c

th j-a

PARAMETER

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

MAX

3.12

UNIT

℃/W

isc Website：www.iscsemi.cn

BDT31B Related Products

	BDT31B	BDT31	BDT31A	BDT31C	BDT81	BDT83	BDT85	BDT87
Description	isc Silicon NPN Power Transistors	isc Silicon NPN Power Transistors	isc Silicon NPN Power Transistors	isc Silicon NPN Power Transistors	isc Silicon NPN Power Transistors	isc Silicon NPN Power Transistors	isc Silicon NPN Power Transistors	isc Silicon NPN Power Transistors

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