INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
DESCRIPTION
·DC
Current Gain -h
FE
= 25(Min)@ I
C
=
1.0A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 40V(Min)- BDT31; 60V(Min)- BDT31A
80V(Min)- BDT31B; 100V(Min)- BDT31C
·Complement
to Type BDT32/A/B/C
APPLICATIONS
·Designed
for use in audio output stages and general amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃
)
SYMBOL
PARAMETER
BDT31
BDT 31A
V
CBO
Collector-Base Voltage
BDT 31B
BDT 31C
BDT31
BDT 31A
V
CEO
Collector-Emitter Voltage
BDT 31B
BDT 31C
V
EBO
I
C
I
CM
I
B
B
BDT31/A/B/C
VALUE
80
100
UNIT
V
120
140
40
60
V
80
100
5
3
5
1
40
150
-65~150
V
A
A
A
W
℃
℃
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Ttemperature Range
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
3.12
70
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDT31
BDT 31A
I
C
= 30mA; I
B
= 0
BDT 31B
BDT 31C
V
CE(sat)
V
BE(on)
I
CES
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
BDT31/A
I
CEO
Collector Cutoff Current
BDT31B/C
I
EBO
h
FE-1
h
FE-2
f
T
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
V
CE
= 60V; I
B
= 0
B
BDT31/A/B/C
CONDITIONS
MIN
40
60
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
V
80
100
I
C
= 3A; I
B
= 0.375A
B
1.2
1.8
0.2
V
V
mA
I
C
= 3A ; V
CE
= 4V
V
CE
= V
CEOmax
; V
BE
= 0
V
CE
= 30V; I
B
= 0
B
0.1
mA
V
EB
= 5V; I
C
= 0
I
C
= 1A ; V
CE
= 4V
I
C
= 3A ; V
CE
= 4V
I
C
= 0.5A ; V
CE
= 10V
25
10
3
0.2
mA
50
MHz
Switching Times
t
on
t
off
Turn-On Time
I
C
= 1.0A; I
B1
= -I
B2
= 0.1A
Turn-Off Time
1.0
μs
0.3
μs
isc Website：www.iscsemi.cn
Test/Measurement
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