Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ15003
DESCRIPTION
・With
TO-3 package
・Complement
to type MJ15004
・Excellent
safe operating area
APPLICATIONS
・For
high power audio,disk head positioners
and other linear applications
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
I
E
P
D
T
j
T
stg
PARAMETER
固电
Collector-base voltage
导½
半
ANG
H
CONDITIONS
Collector-emitter voltage
Emitter-base voltage
Collector current
INC
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
140
140
5
20
5
-25
UNIT
V
V
V
A
A
A
W
℃
℃
Base current
Emitter current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
250
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
0.7
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat
V
BE
I
CEO
I
CEX
I
EBO
h
FE
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
I
C
=0.2A ;I
B
=0
I
C
=5A; I
B
=0.5A
I
C
=5A ; V
CE
=2V
V
CE
=140V; I
B
=0
V
CE
=140V; V
BE(off)
=1.5V
T
C
=150℃
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=2V
V
CE
=50Vdc,t=1 s, Nonrepetitive
I
s/b
25
5
1
MIN
140
MJ15003
TYP.
MAX
UNIT
V
1.0
2.0
0.25
0.1
2.0
0.1
150
V
V
mA
mA
mA
C
OB
f
T
电半
固
Second breakdown collector current
With base forward biased
导½
V
CE
=100Vdc,t=1 s, Nonrepetitive
I
E
=0 ; V
CB
=10V;f=1.0MHz
Output capacitance
Transition frequency
HA
INC
ES
NG
I
C
=0.5A ; V
CE
=10V;f=0.5MHz
MIC
E
DUC
ON
2
OR
T
1000
A
pF
MHz
2
Embedded System
京公网安备 11010802033920号
EEWORLD
