INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector
Current -I
C
=
10A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 45V(Min)- BDV91; 60V(Min)- BDV93
80V(Min)- BDV95
·Complement
to Type BDV92/94/96
APPLICATIONS
·Designed
for use in audio output stages and general
amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDV91
V
CER
Collector-Emitter
Voltage
BDV93
BDV95
BDV91
V
CEO
Collector-Emitter
Voltage
BDV93
BDV95
V
EBO
I
C
I
CM
I
B
B
BDV91/93/95
VALUE
60
80
100
60
80
100
7
10
20
7
14
100
150
-65~150
UNIT
V
V
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Emitter Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
V
A
A
A
A
W
℃
℃
I
E
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.25
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BDV91
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
BDV93
BDV95
V
CE(sat)-1
V
CE(sat)-2
V
BE(sat)
V
BE(
on
)
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base -Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
I
C
= 4A; I
B
= 0.4A
B
BDV91/93/95
CONDITIONS
MIN
60
TYP.
MAX
UNIT
I
C
= 100mA ;I
B
=0
80
100
1.0
3.0
1.6
1.6
0.2
0.1
1.0
0.1
20
5
3.0
V
V
V
V
V
mA
mA
mA
I
C
= 10A; I
B
= 3.3A
I
C
= 4A; I
B
= 0.4A
B
I
C
= 4A ; V
CE
= 4V
V
CE
= V
CEOmax
;I
B
= 0
V
CB
= V
CBOmax
;I
E
= 0
1
V
CB
= /
2
V
CBOmax
;I
E
= 0; T
J
= 150℃
V
EB
= 7V; I
C
=0
I
C
= 4A ; V
CE
= 4V
I
C
= 10A ; V
CE
= 4V
I
C
= 0.5A ;V
CE
= 10V
MHz
Switching times
t
on
t
off
t
f
Turn-on Time
Turn-off Time
Fall Time
I
C
= 4A; I
B1
= -I
B2
= 0.4A;
V
CC
= 30V
0.5
2.0
0.7
μs
μs
μs
isc Website：www.iscsemi.cn
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